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Ellipsometric In Situ Methods of Temperature Control in the Technology of Growing MBE MCT Layers. / Shvets, V. A.; Marin, D. V.; Azarov, I. A. et al.

In: Optoelectronics, Instrumentation and Data Processing, Vol. 57, No. 5, 5, 09.2021, p. 476-484.

Research output: Contribution to journal › Article › peer-review

Harvard

Shvets, VA, Marin, DV, Azarov, IA, Yakushev, MV & Rykhlitskii, SV 2021, 'Ellipsometric In Situ Methods of Temperature Control in the Technology of Growing MBE MCT Layers', Optoelectronics, Instrumentation and Data Processing, vol. 57, no. 5, 5, pp. 476-484. https://doi.org/10.3103/S8756699021050150

APA

Shvets, V. A., Marin, D. V., Azarov, I. A., Yakushev, M. V., & Rykhlitskii, S. V. (2021). Ellipsometric In Situ Methods of Temperature Control in the Technology of Growing MBE MCT Layers. Optoelectronics, Instrumentation and Data Processing, 57(5), 476-484. [5]. https://doi.org/10.3103/S8756699021050150

Vancouver

Shvets VA, Marin DV, Azarov IA, Yakushev MV, Rykhlitskii SV. Ellipsometric In Situ Methods of Temperature Control in the Technology of Growing MBE MCT Layers. Optoelectronics, Instrumentation and Data Processing. 2021 Sept;57(5):476-484. 5. doi: 10.3103/S8756699021050150

Author

Shvets, V. A. ; Marin, D. V. ; Azarov, I. A. et al. / Ellipsometric In Situ Methods of Temperature Control in the Technology of Growing MBE MCT Layers. In: Optoelectronics, Instrumentation and Data Processing. 2021 ; Vol. 57, No. 5. pp. 476-484.

BibTeX

@article{ac7ae020f13941d88dba7febdd2af3c8,
title = "Ellipsometric In Situ Methods of Temperature Control in the Technology of Growing MBE MCT Layers",
abstract = "The problem of in situ temperature control during the growth of epitaxial layers of HgCdTe by molecular beam epitaxy is considered. Various approaches to solving the problem using spectroscopic ellipsometry are proposed. They are based on the temperature dependence of the optical constants spectra of the CdTe buffer layer and the growing HgCdTe layer. The results of experimental testing of these methods are presented, which show that the temperature measurement accuracy is several degrees, and the sensitivity reaches fractions of a degree. At the stage of stationary growth, it is possible to determine the change not only in the temperature, but also in the composition of the growing layer from the ellipsometric spectra.",
keywords = "ellipsometry, growth temperature, mercury cadmium telluride, molecular beam epitaxy, process control",
author = "Shvets, {V. A.} and Marin, {D. V.} and Azarov, {I. A.} and Yakushev, {M. V.} and Rykhlitskii, {S. V.}",
note = "Publisher Copyright: {\textcopyright} 2021, Allerton Press, Inc.",
year = "2021",
month = sep,
doi = "10.3103/S8756699021050150",
language = "English",
volume = "57",
pages = "476--484",
journal = "Optoelectronics, Instrumentation and Data Processing",
issn = "8756-6990",
publisher = "Allerton Press Inc.",
number = "5",

}

RIS

TY - JOUR

T1 - Ellipsometric In Situ Methods of Temperature Control in the Technology of Growing MBE MCT Layers

AU - Shvets, V. A.

AU - Marin, D. V.

AU - Azarov, I. A.

AU - Yakushev, M. V.

AU - Rykhlitskii, S. V.

N1 - Publisher Copyright: © 2021, Allerton Press, Inc.

PY - 2021/9

Y1 - 2021/9

N2 - The problem of in situ temperature control during the growth of epitaxial layers of HgCdTe by molecular beam epitaxy is considered. Various approaches to solving the problem using spectroscopic ellipsometry are proposed. They are based on the temperature dependence of the optical constants spectra of the CdTe buffer layer and the growing HgCdTe layer. The results of experimental testing of these methods are presented, which show that the temperature measurement accuracy is several degrees, and the sensitivity reaches fractions of a degree. At the stage of stationary growth, it is possible to determine the change not only in the temperature, but also in the composition of the growing layer from the ellipsometric spectra.

AB - The problem of in situ temperature control during the growth of epitaxial layers of HgCdTe by molecular beam epitaxy is considered. Various approaches to solving the problem using spectroscopic ellipsometry are proposed. They are based on the temperature dependence of the optical constants spectra of the CdTe buffer layer and the growing HgCdTe layer. The results of experimental testing of these methods are presented, which show that the temperature measurement accuracy is several degrees, and the sensitivity reaches fractions of a degree. At the stage of stationary growth, it is possible to determine the change not only in the temperature, but also in the composition of the growing layer from the ellipsometric spectra.

KW - ellipsometry

KW - growth temperature

KW - mercury cadmium telluride

KW - molecular beam epitaxy

KW - process control

UR - http://www.scopus.com/inward/record.url?scp=85126787585&partnerID=8YFLogxK

UR - https://www.elibrary.ru/item.asp?id=48193592

UR - https://www.mendeley.com/catalogue/dfceeb9d-78f7-3c91-a56d-a1f401fa4058/

U2 - 10.3103/S8756699021050150

DO - 10.3103/S8756699021050150

M3 - Article

AN - SCOPUS:85126787585

VL - 57

SP - 476

EP - 484

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 5

M1 - 5

ER -

ID: 35771128