Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers › Research Explorer

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Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers

Research output: Contribution to journal › Article › peer-review

Department of Physics

DOI

https://doi.org/10.1134/S1063782618060143
Final published version

T. V. Malin
D. S. Milakhin
V. G. Mansurov
Yu G. Galitsyn
A. S. Kozhuhov
V. V. Ratnikov
A. N. Smirnov
V. Yu Davydov
K. S. Zhuravlev

Original language	English
Pages (from-to)	789-796
Number of pages	8
Journal	Semiconductors
Volume	52
Issue number	6
DOIs	https://doi.org/10.1134/S1063782618060143
Publication status	Published - 1 Jun 2018

Research areas

VAPOR-PHASE EPITAXY, 0001 AL2O3, GAN, SURFACE, GROWTH, POLARITY, SUBSTRATE, FILMS, MICROSCOPY, MORPHOLOGY

OECD FOS+WOS

ID: 13488171