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Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers. / Malin, T. V.; Milakhin, D. S.; Mansurov, V. G. et al.

In: Semiconductors, Vol. 52, No. 6, 01.06.2018, p. 789-796.

Research output: Contribution to journal › Article › peer-review

Harvard

Malin, TV, Milakhin, DS, Mansurov, VG, Galitsyn, YG, Kozhuhov, AS, Ratnikov, VV, Smirnov, AN, Davydov, VY & Zhuravlev, KS 2018, 'Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers', Semiconductors, vol. 52, no. 6, pp. 789-796. https://doi.org/10.1134/S1063782618060143

APA

Malin, T. V., Milakhin, D. S., Mansurov, V. G., Galitsyn, Y. G., Kozhuhov, A. S., Ratnikov, V. V., Smirnov, A. N., Davydov, V. Y., & Zhuravlev, K. S. (2018). Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers. Semiconductors, 52(6), 789-796. https://doi.org/10.1134/S1063782618060143

Vancouver

Malin TV, Milakhin DS, Mansurov VG, Galitsyn YG, Kozhuhov AS, Ratnikov VV et al. Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers. Semiconductors. 2018 Jun 1;52(6):789-796. doi: 10.1134/S1063782618060143

Author

Malin, T. V. ; Milakhin, D. S. ; Mansurov, V. G. et al. / Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers. In: Semiconductors. 2018 ; Vol. 52, No. 6. pp. 789-796.

BibTeX

@article{0f127c3cb8b34776ae4f883535133553,
title = "Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers",
abstract = "The effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of AlN is shown to ensure the growth of layers with a smoother surface and better crystal quality than in the case of the formation of a nitrided AlN layer with a thickness of ~2 monolayers. It is demonstrated that the change in the duration of exposure of nitrided substrates to the atomic aluminum flux does not significantly affect the parameters of subsequent AlN layers.",
keywords = "VAPOR-PHASE EPITAXY, 0001 AL2O3, GAN, SURFACE, GROWTH, POLARITY, SUBSTRATE, FILMS, MICROSCOPY, MORPHOLOGY",
author = "Malin, {T. V.} and Milakhin, {D. S.} and Mansurov, {V. G.} and Galitsyn, {Yu G.} and Kozhuhov, {A. S.} and Ratnikov, {V. V.} and Smirnov, {A. N.} and Davydov, {V. Yu} and Zhuravlev, {K. S.}",
note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",
year = "2018",
month = jun,
day = "1",
doi = "10.1134/S1063782618060143",
language = "English",
volume = "52",
pages = "789--796",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "6",

}

RIS

TY - JOUR

T1 - Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers

AU - Malin, T. V.

AU - Milakhin, D. S.

AU - Mansurov, V. G.

AU - Galitsyn, Yu G.

AU - Kozhuhov, A. S.

AU - Ratnikov, V. V.

AU - Smirnov, A. N.

AU - Davydov, V. Yu

AU - Zhuravlev, K. S.

N1 - Publisher Copyright: © 2018, Pleiades Publishing, Ltd.

PY - 2018/6/1

Y1 - 2018/6/1

N2 - The effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of AlN is shown to ensure the growth of layers with a smoother surface and better crystal quality than in the case of the formation of a nitrided AlN layer with a thickness of ~2 monolayers. It is demonstrated that the change in the duration of exposure of nitrided substrates to the atomic aluminum flux does not significantly affect the parameters of subsequent AlN layers.

AB - The effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of AlN is shown to ensure the growth of layers with a smoother surface and better crystal quality than in the case of the formation of a nitrided AlN layer with a thickness of ~2 monolayers. It is demonstrated that the change in the duration of exposure of nitrided substrates to the atomic aluminum flux does not significantly affect the parameters of subsequent AlN layers.

KW - VAPOR-PHASE EPITAXY

KW - 0001 AL2O3

KW - GAN

KW - SURFACE

KW - GROWTH

KW - POLARITY

KW - SUBSTRATE

KW - FILMS

KW - MICROSCOPY

KW - MORPHOLOGY

UR - http://www.scopus.com/inward/record.url?scp=85047215568&partnerID=8YFLogxK

U2 - 10.1134/S1063782618060143

DO - 10.1134/S1063782618060143

M3 - Article

AN - SCOPUS:85047215568

VL - 52

SP - 789

EP - 796

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 6

ER -

ID: 13488171