Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures

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Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures. / Shamirzaev, Timur S ; Atuchin, Victor V.

In: Nanomaterials, Vol. 13, No. 14, 2136, 23.07.2023.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{1a983840eb5d49d5bb1fdae076317d0e,

title = "Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures",

abstract = "The vacancy generation dynamics in doped semiconductor heterostructures with quantum dots (QD) formed in the cationic and anionic sublattices of AlAs is studied. We demonstrate experimentally that the vacancy-mediated high temperature diffusion is enhanced (suppressed) in n- and p-doped heterostructures with QDs formed in the cationic sublattice, while the opposite behavior occurs in the heterostructures with QDs formed in the anionic sublattice. A model describing the doping effect on the vacancy generation dynamics is developed. The effect of nonuniform charge carrier spatial distribution arisen in heterostructures at high temperatures on the vacancy generation and diffusion is revealed.",

author = "Shamirzaev, {Timur S} and Atuchin, {Victor V}",

note = "Funding: This work was supported by the Russian Science Foundation (grant no. 22-12-00022).",

year = "2023",

month = jul,

day = "23",

doi = "10.3390/nano13142136",

language = "English",

volume = "13",

journal = "Nanomaterials",

issn = "2079-4991",

publisher = "MDPI AG",

number = "14",

}

RIS

TY - JOUR

T1 - Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures

AU - Shamirzaev, Timur S

AU - Atuchin, Victor V

N1 - Funding: This work was supported by the Russian Science Foundation (grant no. 22-12-00022).

PY - 2023/7/23

Y1 - 2023/7/23

N2 - The vacancy generation dynamics in doped semiconductor heterostructures with quantum dots (QD) formed in the cationic and anionic sublattices of AlAs is studied. We demonstrate experimentally that the vacancy-mediated high temperature diffusion is enhanced (suppressed) in n- and p-doped heterostructures with QDs formed in the cationic sublattice, while the opposite behavior occurs in the heterostructures with QDs formed in the anionic sublattice. A model describing the doping effect on the vacancy generation dynamics is developed. The effect of nonuniform charge carrier spatial distribution arisen in heterostructures at high temperatures on the vacancy generation and diffusion is revealed.

AB - The vacancy generation dynamics in doped semiconductor heterostructures with quantum dots (QD) formed in the cationic and anionic sublattices of AlAs is studied. We demonstrate experimentally that the vacancy-mediated high temperature diffusion is enhanced (suppressed) in n- and p-doped heterostructures with QDs formed in the cationic sublattice, while the opposite behavior occurs in the heterostructures with QDs formed in the anionic sublattice. A model describing the doping effect on the vacancy generation dynamics is developed. The effect of nonuniform charge carrier spatial distribution arisen in heterostructures at high temperatures on the vacancy generation and diffusion is revealed.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85166227700&origin=inward&txGid=1041414cf2a0e54fdb3c01e5bf95df60

U2 - 10.3390/nano13142136

DO - 10.3390/nano13142136

M3 - Article

C2 - 37513147

VL - 13

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 14

M1 - 2136

ER -

ID: 53248347