Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures. / Shamirzaev, Timur S; Atuchin, Victor V.
в: Nanomaterials, Том 13, № 14, 2136, 23.07.2023.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures
AU - Shamirzaev, Timur S
AU - Atuchin, Victor V
N1 - Funding: This work was supported by the Russian Science Foundation (grant no. 22-12-00022).
PY - 2023/7/23
Y1 - 2023/7/23
N2 - The vacancy generation dynamics in doped semiconductor heterostructures with quantum dots (QD) formed in the cationic and anionic sublattices of AlAs is studied. We demonstrate experimentally that the vacancy-mediated high temperature diffusion is enhanced (suppressed) in n- and p-doped heterostructures with QDs formed in the cationic sublattice, while the opposite behavior occurs in the heterostructures with QDs formed in the anionic sublattice. A model describing the doping effect on the vacancy generation dynamics is developed. The effect of nonuniform charge carrier spatial distribution arisen in heterostructures at high temperatures on the vacancy generation and diffusion is revealed.
AB - The vacancy generation dynamics in doped semiconductor heterostructures with quantum dots (QD) formed in the cationic and anionic sublattices of AlAs is studied. We demonstrate experimentally that the vacancy-mediated high temperature diffusion is enhanced (suppressed) in n- and p-doped heterostructures with QDs formed in the cationic sublattice, while the opposite behavior occurs in the heterostructures with QDs formed in the anionic sublattice. A model describing the doping effect on the vacancy generation dynamics is developed. The effect of nonuniform charge carrier spatial distribution arisen in heterostructures at high temperatures on the vacancy generation and diffusion is revealed.
UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85166227700&origin=inward&txGid=1041414cf2a0e54fdb3c01e5bf95df60
U2 - 10.3390/nano13142136
DO - 10.3390/nano13142136
M3 - Article
C2 - 37513147
VL - 13
JO - Nanomaterials
JF - Nanomaterials
SN - 2079-4991
IS - 14
M1 - 2136
ER -
ID: 53248347