Research output: Contribution to journal › Article › peer-review
Effect of Interfaces and Thickness on the Crystallization Kinetics of Amorphous Germanium Films. / Krivyakin, G. K.; Volodin, V. A.; Kamaev, G. N. et al.
In: Semiconductors, Vol. 54, No. 7, 01.07.2020, p. 754-758.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Effect of Interfaces and Thickness on the Crystallization Kinetics of Amorphous Germanium Films
AU - Krivyakin, G. K.
AU - Volodin, V. A.
AU - Kamaev, G. N.
AU - Popov, A. A.
N1 - Funding Information: This work was carried out according to the state assignment of the Ministry of Education and Science of the Russian Federation: in terms of crystallization and investigation of Raman spectra—the Basic Research Program, Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, no. 0306-2019-0019; in terms of growth of structures—the Basic Research Program, Ioffe Physical–Technical Institute, the Russian Academy of Sciences, no. 0066-2019-0003. ACKNOWLEDGMENTS Publisher Copyright: © 2020, Pleiades Publishing, Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/7/1
Y1 - 2020/7/1
N2 - The processes of crystallization of amorphous germanium films of various thicknesses and multilayer germanium/silicon nanostructures under isothermal annealing (T = 440°C) were studied. Samples were grown on glass substrates using the method of plasma-chemical deposition. The phase composition of the structures was determined from the analysis of Raman spectra. It was found that 200 nm thick germanium film almost completely crystallizes after two hours of annealing, while crystalline nuclei with a volume fraction of less than 1% only appear in a 6 mm thick germanium film. Four-hour annealing of a thin film leads to a noticeable increase in the nuclei size and the crystallinity fraction increases to 40%. Annealing of a-Ge (6 nm) nanolayers embedded in a-Si matrix under the same conditions for 2 and 4 hours does not even lead to partial crystallization, the layers remain amorphous. The influence of interfaces on the crystallization of germanium layers is discussed.
AB - The processes of crystallization of amorphous germanium films of various thicknesses and multilayer germanium/silicon nanostructures under isothermal annealing (T = 440°C) were studied. Samples were grown on glass substrates using the method of plasma-chemical deposition. The phase composition of the structures was determined from the analysis of Raman spectra. It was found that 200 nm thick germanium film almost completely crystallizes after two hours of annealing, while crystalline nuclei with a volume fraction of less than 1% only appear in a 6 mm thick germanium film. Four-hour annealing of a thin film leads to a noticeable increase in the nuclei size and the crystallinity fraction increases to 40%. Annealing of a-Ge (6 nm) nanolayers embedded in a-Si matrix under the same conditions for 2 and 4 hours does not even lead to partial crystallization, the layers remain amorphous. The influence of interfaces on the crystallization of germanium layers is discussed.
KW - crystallization kinetics
KW - germanium
KW - interfaces
KW - RAMAN-SCATTERING
KW - HYDROGENATED SILICON
UR - http://www.scopus.com/inward/record.url?scp=85087122433&partnerID=8YFLogxK
U2 - 10.1134/S1063782620070040
DO - 10.1134/S1063782620070040
M3 - Article
AN - SCOPUS:85087122433
VL - 54
SP - 754
EP - 758
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 7
ER -
ID: 24613923