Research output: Contribution to journal › Conference article › peer-review
Effect of hydrogen concentration on CVD synthesis of graphene. / Kostogrud, I. A.; Boyko, E. V.; Smovzh, D. V.
In: Journal of Physics: Conference Series, Vol. 1382, No. 1, 012157, 28.11.2019.Research output: Contribution to journal › Conference article › peer-review
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TY - JOUR
T1 - Effect of hydrogen concentration on CVD synthesis of graphene
AU - Kostogrud, I. A.
AU - Boyko, E. V.
AU - Smovzh, D. V.
PY - 2019/11/28
Y1 - 2019/11/28
N2 - The paper is devoted to the study of AP-CVD synthesis of graphene on a copper substrate. In this work, the effect of hydrogen concentration in the synthesis gas mixture on the growth of a graphene coating is studied experimentally. Two series of experiments with methane concentrations of 0.02% and 0.05% are presented. It is shown that a change in concentration of hydrogen has a nonmonotonic effect on the degree of substrate covering with graphene. This indicates that hydrogen is involved in several competing processes. One of these processes is stabilization of the edges of growing graphene domains. Another is etching of the forming graphene structures and reduction of hydrocarbon radicals on the copper substrate surface and in the bulk. It is shown that an increase in methane concentration leads to an increase in the rate of graphene crystal growth. To preserve the kinetics of graphene domain growth, it is necessary to reduce the H2/CH4 coefficient in the working mixture.
AB - The paper is devoted to the study of AP-CVD synthesis of graphene on a copper substrate. In this work, the effect of hydrogen concentration in the synthesis gas mixture on the growth of a graphene coating is studied experimentally. Two series of experiments with methane concentrations of 0.02% and 0.05% are presented. It is shown that a change in concentration of hydrogen has a nonmonotonic effect on the degree of substrate covering with graphene. This indicates that hydrogen is involved in several competing processes. One of these processes is stabilization of the edges of growing graphene domains. Another is etching of the forming graphene structures and reduction of hydrocarbon radicals on the copper substrate surface and in the bulk. It is shown that an increase in methane concentration leads to an increase in the rate of graphene crystal growth. To preserve the kinetics of graphene domain growth, it is necessary to reduce the H2/CH4 coefficient in the working mixture.
KW - CHEMICAL-VAPOR-DEPOSITION
KW - GROWTH
KW - NUCLEATION
KW - FILMS
UR - http://www.scopus.com/inward/record.url?scp=85077269291&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/1382/1/012157
DO - 10.1088/1742-6596/1382/1/012157
M3 - Conference article
AN - SCOPUS:85077269291
VL - 1382
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012157
T2 - 3th Siberian Thermophysical Seminar, STS 2019
Y2 - 27 August 2019 through 29 August 2019
ER -
ID: 22967453