Standard

Effect of hydrogen concentration on CVD synthesis of graphene. / Kostogrud, I. A.; Boyko, E. V.; Smovzh, D. V.

In: Journal of Physics: Conference Series, Vol. 1382, No. 1, 012157, 28.11.2019.

Research output: Contribution to journalConference articlepeer-review

Harvard

Kostogrud, IA, Boyko, EV & Smovzh, DV 2019, 'Effect of hydrogen concentration on CVD synthesis of graphene', Journal of Physics: Conference Series, vol. 1382, no. 1, 012157. https://doi.org/10.1088/1742-6596/1382/1/012157

APA

Kostogrud, I. A., Boyko, E. V., & Smovzh, D. V. (2019). Effect of hydrogen concentration on CVD synthesis of graphene. Journal of Physics: Conference Series, 1382(1), [012157]. https://doi.org/10.1088/1742-6596/1382/1/012157

Vancouver

Kostogrud IA, Boyko EV, Smovzh DV. Effect of hydrogen concentration on CVD synthesis of graphene. Journal of Physics: Conference Series. 2019 Nov 28;1382(1):012157. doi: 10.1088/1742-6596/1382/1/012157

Author

Kostogrud, I. A. ; Boyko, E. V. ; Smovzh, D. V. / Effect of hydrogen concentration on CVD synthesis of graphene. In: Journal of Physics: Conference Series. 2019 ; Vol. 1382, No. 1.

BibTeX

@article{08cc780d830d4e168e907e772dd5f0bd,
title = "Effect of hydrogen concentration on CVD synthesis of graphene",
abstract = "The paper is devoted to the study of AP-CVD synthesis of graphene on a copper substrate. In this work, the effect of hydrogen concentration in the synthesis gas mixture on the growth of a graphene coating is studied experimentally. Two series of experiments with methane concentrations of 0.02% and 0.05% are presented. It is shown that a change in concentration of hydrogen has a nonmonotonic effect on the degree of substrate covering with graphene. This indicates that hydrogen is involved in several competing processes. One of these processes is stabilization of the edges of growing graphene domains. Another is etching of the forming graphene structures and reduction of hydrocarbon radicals on the copper substrate surface and in the bulk. It is shown that an increase in methane concentration leads to an increase in the rate of graphene crystal growth. To preserve the kinetics of graphene domain growth, it is necessary to reduce the H2/CH4 coefficient in the working mixture.",
keywords = "CHEMICAL-VAPOR-DEPOSITION, GROWTH, NUCLEATION, FILMS",
author = "Kostogrud, {I. A.} and Boyko, {E. V.} and Smovzh, {D. V.}",
year = "2019",
month = nov,
day = "28",
doi = "10.1088/1742-6596/1382/1/012157",
language = "English",
volume = "1382",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",
note = "3th Siberian Thermophysical Seminar, STS 2019 ; Conference date: 27-08-2019 Through 29-08-2019",

}

RIS

TY - JOUR

T1 - Effect of hydrogen concentration on CVD synthesis of graphene

AU - Kostogrud, I. A.

AU - Boyko, E. V.

AU - Smovzh, D. V.

PY - 2019/11/28

Y1 - 2019/11/28

N2 - The paper is devoted to the study of AP-CVD synthesis of graphene on a copper substrate. In this work, the effect of hydrogen concentration in the synthesis gas mixture on the growth of a graphene coating is studied experimentally. Two series of experiments with methane concentrations of 0.02% and 0.05% are presented. It is shown that a change in concentration of hydrogen has a nonmonotonic effect on the degree of substrate covering with graphene. This indicates that hydrogen is involved in several competing processes. One of these processes is stabilization of the edges of growing graphene domains. Another is etching of the forming graphene structures and reduction of hydrocarbon radicals on the copper substrate surface and in the bulk. It is shown that an increase in methane concentration leads to an increase in the rate of graphene crystal growth. To preserve the kinetics of graphene domain growth, it is necessary to reduce the H2/CH4 coefficient in the working mixture.

AB - The paper is devoted to the study of AP-CVD synthesis of graphene on a copper substrate. In this work, the effect of hydrogen concentration in the synthesis gas mixture on the growth of a graphene coating is studied experimentally. Two series of experiments with methane concentrations of 0.02% and 0.05% are presented. It is shown that a change in concentration of hydrogen has a nonmonotonic effect on the degree of substrate covering with graphene. This indicates that hydrogen is involved in several competing processes. One of these processes is stabilization of the edges of growing graphene domains. Another is etching of the forming graphene structures and reduction of hydrocarbon radicals on the copper substrate surface and in the bulk. It is shown that an increase in methane concentration leads to an increase in the rate of graphene crystal growth. To preserve the kinetics of graphene domain growth, it is necessary to reduce the H2/CH4 coefficient in the working mixture.

KW - CHEMICAL-VAPOR-DEPOSITION

KW - GROWTH

KW - NUCLEATION

KW - FILMS

UR - http://www.scopus.com/inward/record.url?scp=85077269291&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1382/1/012157

DO - 10.1088/1742-6596/1382/1/012157

M3 - Conference article

AN - SCOPUS:85077269291

VL - 1382

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012157

T2 - 3th Siberian Thermophysical Seminar, STS 2019

Y2 - 27 August 2019 through 29 August 2019

ER -

ID: 22967453