Effect of deposition conditions on the thermal stability of Ge layers on SiO2 and their dewetting behavior

Standard

Effect of deposition conditions on the thermal stability of Ge layers on SiO₂ and their dewetting behavior. / Dabard, C.; Shklyaev, A. A.; Armbrister, V. A. et al.

In: Thin Solid Films, Vol. 693, 137681, 01.01.2020.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{b264ec4256ea4cb2b6126d478a1b0a02,

title = "Effect of deposition conditions on the thermal stability of Ge layers on SiO2 and their dewetting behavior",

abstract = "Resonant light scattering properties of dielectric particles are highly sensitive to particle shapes and optical parameters of particle/substrate systems. To obtain submicron-sized Ge particle arrays of interest for applications in the near-infrared spectral range, we studied the breakup of relatively thick (60 nm) Ge layers on SiO2 caused by dewetting. It was found that the mechanism of the dewetting process depends on the temperature and the method of initial Ge layer deposition. The Ge layers, deposited using a Knudsen cell, were transformed into Ge particles by solid-state dewetting. The particle shape was determined by the kinetics of surface processes. The particle formation from Ge layers, grown by the Ge evaporation using an electron beam, requires their melting. The Ge droplet solidification on SiO2 after the liquid-state dewetting creates the particles of identical shapes close to the hemisperical, indicating that they are formed in the near equlibrium conditions. The scattering magnitude of contact angles reflects the deviation degree of the particle formation conditions from the thermodynamically equilibrium.",

keywords = "Electron beam evaporation, Germanium, Knudsen cell, Liquid-state dewetting, Silicon dioxide, Solid-state dewetting, Surface morphology",

author = "C. Dabard and Shklyaev, {A. A.} and Armbrister, {V. A.} and Aseev, {A. L.}",

year = "2020",

month = jan,

day = "1",

doi = "10.1016/j.tsf.2019.137681",

language = "English",

volume = "693",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Effect of deposition conditions on the thermal stability of Ge layers on SiO2 and their dewetting behavior

AU - Dabard, C.

AU - Shklyaev, A. A.

AU - Armbrister, V. A.

AU - Aseev, A. L.

PY - 2020/1/1

Y1 - 2020/1/1

N2 - Resonant light scattering properties of dielectric particles are highly sensitive to particle shapes and optical parameters of particle/substrate systems. To obtain submicron-sized Ge particle arrays of interest for applications in the near-infrared spectral range, we studied the breakup of relatively thick (60 nm) Ge layers on SiO2 caused by dewetting. It was found that the mechanism of the dewetting process depends on the temperature and the method of initial Ge layer deposition. The Ge layers, deposited using a Knudsen cell, were transformed into Ge particles by solid-state dewetting. The particle shape was determined by the kinetics of surface processes. The particle formation from Ge layers, grown by the Ge evaporation using an electron beam, requires their melting. The Ge droplet solidification on SiO2 after the liquid-state dewetting creates the particles of identical shapes close to the hemisperical, indicating that they are formed in the near equlibrium conditions. The scattering magnitude of contact angles reflects the deviation degree of the particle formation conditions from the thermodynamically equilibrium.

AB - Resonant light scattering properties of dielectric particles are highly sensitive to particle shapes and optical parameters of particle/substrate systems. To obtain submicron-sized Ge particle arrays of interest for applications in the near-infrared spectral range, we studied the breakup of relatively thick (60 nm) Ge layers on SiO2 caused by dewetting. It was found that the mechanism of the dewetting process depends on the temperature and the method of initial Ge layer deposition. The Ge layers, deposited using a Knudsen cell, were transformed into Ge particles by solid-state dewetting. The particle shape was determined by the kinetics of surface processes. The particle formation from Ge layers, grown by the Ge evaporation using an electron beam, requires their melting. The Ge droplet solidification on SiO2 after the liquid-state dewetting creates the particles of identical shapes close to the hemisperical, indicating that they are formed in the near equlibrium conditions. The scattering magnitude of contact angles reflects the deviation degree of the particle formation conditions from the thermodynamically equilibrium.

KW - Electron beam evaporation

KW - Germanium

KW - Knudsen cell

KW - Liquid-state dewetting

KW - Silicon dioxide

KW - Solid-state dewetting

KW - Surface morphology

UR - http://www.scopus.com/inward/record.url?scp=85075460821&partnerID=8YFLogxK

UR - https://www.sciencedirect.com/science/article/pii/S0040609019307084

U2 - 10.1016/j.tsf.2019.137681

DO - 10.1016/j.tsf.2019.137681

M3 - Article

AN - SCOPUS:85075460821

VL - 693

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

M1 - 137681

ER -

ID: 22427013