Edge states in lateral p-n junctions in inverted-band HgTe quantum wells › Research Explorer

Novosibirsk State University's Research Portal

Edge states in lateral p-n junctions in inverted-band HgTe quantum wells

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1103/PhysRevB.96.245417
Final published version

S. U. Piatrusha
V. S. Khrapai
Z. D. Kvon
N. N. Mikhailov
S. A. Dvoretsky
E. S. Tikhonov

Original language	English
Article number	245417
Number of pages	10
Journal	Physical Review B
Volume	96
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevB.96.245417
Publication status	Published - 20 Dec 2017

Research areas

ELECTRON-ELECTRON SCATTERING, SHOT-NOISE, SUPPRESSION, CONDUCTORS, TRANSPORT, CONTACTS, PHYSICS

OECD FOS+WOS

ID: 9400761