Edge states in lateral p-n junctions in inverted-band HgTe quantum wells

Standard

Edge states in lateral p-n junctions in inverted-band HgTe quantum wells. / Piatrusha, S. U.; Khrapai, V. S.; Kvon, Z. D. et al.

In: Physical Review B, Vol. 96, No. 24, 245417, 20.12.2017.

Research output: Contribution to journal › Article › peer-review

Harvard

Piatrusha, SU, Khrapai, VS, Kvon, ZD, Mikhailov, NN, Dvoretsky, SA & Tikhonov, ES 2017, 'Edge states in lateral p-n junctions in inverted-band HgTe quantum wells', Physical Review B, vol. 96, no. 24, 245417. https://doi.org/10.1103/PhysRevB.96.245417

APA

Piatrusha, S. U., Khrapai, V. S., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., & Tikhonov, E. S. (2017). Edge states in lateral p-n junctions in inverted-band HgTe quantum wells. Physical Review B, 96(24), [245417]. https://doi.org/10.1103/PhysRevB.96.245417

Vancouver

Piatrusha SU, Khrapai VS, Kvon ZD, Mikhailov NN, Dvoretsky SA, Tikhonov ES. Edge states in lateral p-n junctions in inverted-band HgTe quantum wells. Physical Review B. 2017 Dec 20;96(24):245417. doi: 10.1103/PhysRevB.96.245417

Author

Piatrusha, S. U. ; Khrapai, V. S. ; Kvon, Z. D. et al. / Edge states in lateral p-n junctions in inverted-band HgTe quantum wells. In: Physical Review B. 2017 ; Vol. 96, No. 24.

BibTeX

@article{81a64747c4e84f0990e962ebae4f254d,

title = "Edge states in lateral p-n junctions in inverted-band HgTe quantum wells",

abstract = "We investigate lateral p-n junctions, electrostatically defined in 14-nm-wide HgTe-based quantum wells (QWs) with inverted band structure. The p-n junction resistances are close to h/2e2, consistent with some previous experiments on 8-10nm QWs, and the current-voltage characteristics are highly linear, indicating the transport via ballistic helical edge states. Shot noise measurements are performed in order to further verify the underlying transport mechanism. We discuss the role of unknown inelastic relaxation rates in the leads and in the edge channels for the correct interpretation of the noise data. Although the interpretation in favor of the helical edge states seems more consistent, a definite conclusion cannot be drawn based on the present experiment. Our approach looks promising for the study of short quasiballistic edges in topological insulators in suitable geometry.",

keywords = "ELECTRON-ELECTRON SCATTERING, SHOT-NOISE, SUPPRESSION, CONDUCTORS, TRANSPORT, CONTACTS, PHYSICS",

author = "Piatrusha, {S. U.} and Khrapai, {V. S.} and Kvon, {Z. D.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.} and Tikhonov, {E. S.}",

note = "Publisher Copyright: {\textcopyright} 2017 American Physical Society.",

year = "2017",

month = dec,

day = "20",

doi = "10.1103/PhysRevB.96.245417",

language = "English",

volume = "96",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society",

number = "24",

}

RIS

TY - JOUR

T1 - Edge states in lateral p-n junctions in inverted-band HgTe quantum wells

AU - Piatrusha, S. U.

AU - Khrapai, V. S.

AU - Kvon, Z. D.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

AU - Tikhonov, E. S.

PY - 2017/12/20

Y1 - 2017/12/20

N2 - We investigate lateral p-n junctions, electrostatically defined in 14-nm-wide HgTe-based quantum wells (QWs) with inverted band structure. The p-n junction resistances are close to h/2e2, consistent with some previous experiments on 8-10nm QWs, and the current-voltage characteristics are highly linear, indicating the transport via ballistic helical edge states. Shot noise measurements are performed in order to further verify the underlying transport mechanism. We discuss the role of unknown inelastic relaxation rates in the leads and in the edge channels for the correct interpretation of the noise data. Although the interpretation in favor of the helical edge states seems more consistent, a definite conclusion cannot be drawn based on the present experiment. Our approach looks promising for the study of short quasiballistic edges in topological insulators in suitable geometry.

AB - We investigate lateral p-n junctions, electrostatically defined in 14-nm-wide HgTe-based quantum wells (QWs) with inverted band structure. The p-n junction resistances are close to h/2e2, consistent with some previous experiments on 8-10nm QWs, and the current-voltage characteristics are highly linear, indicating the transport via ballistic helical edge states. Shot noise measurements are performed in order to further verify the underlying transport mechanism. We discuss the role of unknown inelastic relaxation rates in the leads and in the edge channels for the correct interpretation of the noise data. Although the interpretation in favor of the helical edge states seems more consistent, a definite conclusion cannot be drawn based on the present experiment. Our approach looks promising for the study of short quasiballistic edges in topological insulators in suitable geometry.

KW - ELECTRON-ELECTRON SCATTERING

KW - SHOT-NOISE

KW - SUPPRESSION

KW - CONDUCTORS

KW - TRANSPORT

KW - CONTACTS

KW - PHYSICS

UR - http://www.scopus.com/inward/record.url?scp=85039454691&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.96.245417

DO - 10.1103/PhysRevB.96.245417

M3 - Article

AN - SCOPUS:85039454691

VL - 96

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 24

M1 - 245417

ER -

ID: 9400761