Research output: Contribution to journal › Article › peer-review
Drift velocity in GaN semiconductors : Monte Carlo simulation and comparison with experimental measurements. / Kablukova, Evgenia; Sabelfeld, Karl; Protasov, Dmitrii Y. et al.
In: Monte Carlo Methods and Applications, Vol. 26, No. 4, 01.12.2020, p. 263-271.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Drift velocity in GaN semiconductors
T2 - Monte Carlo simulation and comparison with experimental measurements
AU - Kablukova, Evgenia
AU - Sabelfeld, Karl
AU - Protasov, Dmitrii Y.
AU - Zhuravlev, Konstantin S.
N1 - Publisher Copyright: © 2020 Walter de Gruyter GmbH, Berlin/Boston 2020. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/12/1
Y1 - 2020/12/1
N2 - Monte Carlo algorithms are developed to simulate the electron transport in semiconductors. In particular, the drift velocity in GaN semiconductors is calculated, and a comparison with experimental measurements is discussed. Explicit expressions for the scattering probabilities and distributions of the scattering angle of electrons on polar optical and intervalley phonons, and acoustic deformation potential as well are given. A good agreement of the simulation results and the experimental measurements reveals that the M-L valley is located at 0.7 eV higher than the Γ-valley. This value agrees with other experimental studies, while it is lower compared to ab initio calculations.
AB - Monte Carlo algorithms are developed to simulate the electron transport in semiconductors. In particular, the drift velocity in GaN semiconductors is calculated, and a comparison with experimental measurements is discussed. Explicit expressions for the scattering probabilities and distributions of the scattering angle of electrons on polar optical and intervalley phonons, and acoustic deformation potential as well are given. A good agreement of the simulation results and the experimental measurements reveals that the M-L valley is located at 0.7 eV higher than the Γ-valley. This value agrees with other experimental studies, while it is lower compared to ab initio calculations.
KW - Boltzmann equation
KW - Drift velocity
KW - GaN semiconductors
KW - heterostructures
KW - phonons
KW - satellite valleys
UR - http://www.scopus.com/inward/record.url?scp=85096021807&partnerID=8YFLogxK
U2 - 10.1515/mcma-2020-2077
DO - 10.1515/mcma-2020-2077
M3 - Article
AN - SCOPUS:85096021807
VL - 26
SP - 263
EP - 271
JO - Monte Carlo Methods and Applications
JF - Monte Carlo Methods and Applications
SN - 0929-9629
IS - 4
ER -
ID: 26005099