Drift velocity in GaN semiconductors › Обзор исследований

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Drift velocity in GaN semiconductors : Monte Carlo simulation and comparison with experimental measurements. / Kablukova, Evgenia; Sabelfeld, Karl; Protasov, Dmitrii Y. и др.

в: Monte Carlo Methods and Applications, Том 26, № 4, 01.12.2020, стр. 263-271.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Kablukova, E, Sabelfeld, K, Protasov, DY & Zhuravlev, KS 2020, 'Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements', Monte Carlo Methods and Applications, Том. 26, № 4, стр. 263-271. https://doi.org/10.1515/mcma-2020-2077

APA

Kablukova, E., Sabelfeld, K., Protasov, D. Y., & Zhuravlev, K. S. (2020). Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements. Monte Carlo Methods and Applications, 26(4), 263-271. https://doi.org/10.1515/mcma-2020-2077

Vancouver

Kablukova E, Sabelfeld K, Protasov DY, Zhuravlev KS. Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements. Monte Carlo Methods and Applications. 2020 дек. 1;26(4):263-271. Epub 2020 окт. 30. doi: 10.1515/mcma-2020-2077

Author

Kablukova, Evgenia ; Sabelfeld, Karl ; Protasov, Dmitrii Y. и др. / Drift velocity in GaN semiconductors : Monte Carlo simulation and comparison with experimental measurements. в: Monte Carlo Methods and Applications. 2020 ; Том 26, № 4. стр. 263-271.

BibTeX

@article{b7df2516e12343588ab895aade94f23b,

title = "Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements",

abstract = "Monte Carlo algorithms are developed to simulate the electron transport in semiconductors. In particular, the drift velocity in GaN semiconductors is calculated, and a comparison with experimental measurements is discussed. Explicit expressions for the scattering probabilities and distributions of the scattering angle of electrons on polar optical and intervalley phonons, and acoustic deformation potential as well are given. A good agreement of the simulation results and the experimental measurements reveals that the M-L valley is located at 0.7 eV higher than the Γ-valley. This value agrees with other experimental studies, while it is lower compared to ab initio calculations. ",

keywords = "Boltzmann equation, Drift velocity, GaN semiconductors, heterostructures, phonons, satellite valleys",

author = "Evgenia Kablukova and Karl Sabelfeld and Protasov, {Dmitrii Y.} and Zhuravlev, {Konstantin S.}",

year = "2020",

month = dec,

day = "1",

doi = "10.1515/mcma-2020-2077",

language = "English",

volume = "26",

pages = "263--271",

journal = "Monte Carlo Methods and Applications",

issn = "0929-9629",

publisher = "Walter de Gruyter GmbH",

number = "4",

}

RIS

TY - JOUR

T1 - Drift velocity in GaN semiconductors

T2 - Monte Carlo simulation and comparison with experimental measurements

AU - Kablukova, Evgenia

AU - Sabelfeld, Karl

AU - Protasov, Dmitrii Y.

AU - Zhuravlev, Konstantin S.

PY - 2020/12/1

Y1 - 2020/12/1

N2 - Monte Carlo algorithms are developed to simulate the electron transport in semiconductors. In particular, the drift velocity in GaN semiconductors is calculated, and a comparison with experimental measurements is discussed. Explicit expressions for the scattering probabilities and distributions of the scattering angle of electrons on polar optical and intervalley phonons, and acoustic deformation potential as well are given. A good agreement of the simulation results and the experimental measurements reveals that the M-L valley is located at 0.7 eV higher than the Γ-valley. This value agrees with other experimental studies, while it is lower compared to ab initio calculations.

AB - Monte Carlo algorithms are developed to simulate the electron transport in semiconductors. In particular, the drift velocity in GaN semiconductors is calculated, and a comparison with experimental measurements is discussed. Explicit expressions for the scattering probabilities and distributions of the scattering angle of electrons on polar optical and intervalley phonons, and acoustic deformation potential as well are given. A good agreement of the simulation results and the experimental measurements reveals that the M-L valley is located at 0.7 eV higher than the Γ-valley. This value agrees with other experimental studies, while it is lower compared to ab initio calculations.

KW - Boltzmann equation

KW - Drift velocity

KW - GaN semiconductors

KW - heterostructures

KW - phonons

KW - satellite valleys

UR - http://www.scopus.com/inward/record.url?scp=85096021807&partnerID=8YFLogxK

U2 - 10.1515/mcma-2020-2077

DO - 10.1515/mcma-2020-2077

M3 - Article

AN - SCOPUS:85096021807

VL - 26

SP - 263

EP - 271

JO - Monte Carlo Methods and Applications

JF - Monte Carlo Methods and Applications

SN - 0929-9629

IS - 4

ER -

ID: 26005099