Donor-acceptor nature of orange photoluminescence in AlN

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Donor-acceptor nature of orange photoluminescence in AlN. / Aleksandrov, Ivan A.; Malin, Timur V.; Milakhin, Denis S. et al.

In: Semiconductor Science and Technology, Vol. 35, No. 12, 125006, 10.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Aleksandrov, IA, Malin, TV, Milakhin, DS, Ber, BY, Kazantsev, DY & Zhuravlev, KS 2020, 'Donor-acceptor nature of orange photoluminescence in AlN', Semiconductor Science and Technology, vol. 35, no. 12, 125006. https://doi.org/10.1088/1361-6641/abacdd

APA

Aleksandrov, I. A., Malin, T. V., Milakhin, D. S., Ber, B. Y., Kazantsev, D. Y., & Zhuravlev, K. S. (2020). Donor-acceptor nature of orange photoluminescence in AlN. Semiconductor Science and Technology, 35(12), [125006]. https://doi.org/10.1088/1361-6641/abacdd

Vancouver

Aleksandrov IA, Malin TV, Milakhin DS, Ber BY, Kazantsev DY, Zhuravlev KS. Donor-acceptor nature of orange photoluminescence in AlN. Semiconductor Science and Technology. 2020 Oct;35(12):125006. doi: 10.1088/1361-6641/abacdd

Author

Aleksandrov, Ivan A. ; Malin, Timur V. ; Milakhin, Denis S. et al. / Donor-acceptor nature of orange photoluminescence in AlN. In: Semiconductor Science and Technology. 2020 ; Vol. 35, No. 12.

BibTeX

@article{c14533a8221047f9a174b3d684669dcf,

title = "Donor-acceptor nature of orange photoluminescence in AlN",

abstract = "Recombination dynamics, photoluminescence and photoluminescence excitation spectra have been investigated for 1.9 eV photoluminescence band in AlN in the temperature range of 5-650 K. The recombination dynamics for the 1.9 eV photoluminescence band has been described by a model of donor-acceptor recombination with taking into account a broadening due to electron coupling with local lattice vibrations of a deep level defect. The experimental results have been compared with density functional theory calculations of luminescence peak energies and line shapes of band to defect and donor-acceptor transitions, and possible origin of the orange photoluminescence band in AlN has been discussed. ",

keywords = "AlN, defects, photoluminescence, KINETICS, EMISSION",

author = "Aleksandrov, {Ivan A.} and Malin, {Timur V.} and Milakhin, {Denis S.} and Ber, {Boris Ya} and Kazantsev, {Dmitrii Yu} and Zhuravlev, {Konstantin S.}",

year = "2020",

month = oct,

doi = "10.1088/1361-6641/abacdd",

language = "English",

volume = "35",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "12",

}

RIS

TY - JOUR

T1 - Donor-acceptor nature of orange photoluminescence in AlN

AU - Aleksandrov, Ivan A.

AU - Malin, Timur V.

AU - Milakhin, Denis S.

AU - Ber, Boris Ya

AU - Kazantsev, Dmitrii Yu

AU - Zhuravlev, Konstantin S.

PY - 2020/10

Y1 - 2020/10

N2 - Recombination dynamics, photoluminescence and photoluminescence excitation spectra have been investigated for 1.9 eV photoluminescence band in AlN in the temperature range of 5-650 K. The recombination dynamics for the 1.9 eV photoluminescence band has been described by a model of donor-acceptor recombination with taking into account a broadening due to electron coupling with local lattice vibrations of a deep level defect. The experimental results have been compared with density functional theory calculations of luminescence peak energies and line shapes of band to defect and donor-acceptor transitions, and possible origin of the orange photoluminescence band in AlN has been discussed.

AB - Recombination dynamics, photoluminescence and photoluminescence excitation spectra have been investigated for 1.9 eV photoluminescence band in AlN in the temperature range of 5-650 K. The recombination dynamics for the 1.9 eV photoluminescence band has been described by a model of donor-acceptor recombination with taking into account a broadening due to electron coupling with local lattice vibrations of a deep level defect. The experimental results have been compared with density functional theory calculations of luminescence peak energies and line shapes of band to defect and donor-acceptor transitions, and possible origin of the orange photoluminescence band in AlN has been discussed.

KW - AlN

KW - defects

KW - photoluminescence

KW - KINETICS

KW - EMISSION

UR - http://www.scopus.com/inward/record.url?scp=85094963243&partnerID=8YFLogxK

U2 - 10.1088/1361-6641/abacdd

DO - 10.1088/1361-6641/abacdd

M3 - Article

AN - SCOPUS:85094963243

VL - 35

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 12

M1 - 125006

ER -

ID: 26005230