Research output: Contribution to journal › Article › peer-review
Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions. / Tyschenko, I. E.; Voelskow, M.; Si, Zh et al.
In: Semiconductors, Vol. 55, No. 3, 03.2021, p. 289-295.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions
AU - Tyschenko, I. E.
AU - Voelskow, M.
AU - Si, Zh
AU - Popov, V. P.
N1 - Funding Information: The study was supported by the Ministry of Education and Science of the Russian Federation, government order no. 0306-2019-0005. Publisher Copyright: © 2021, Pleiades Publishing, Ltd. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021/3
Y1 - 2021/3
N2 - The diffusion of indium atoms in silicon-dioxide films previously implanted with arsenic ions with different energies is studied in relation to the temperature of postimplantation annealing. It is established that the diffusion properties of indium depend on the presence of arsenic atoms in the film and their energy. An increase in the As content in the region of the average projective range of In+ ions prevents the diffusion of In towards the SiO2 film surface at high annealing temperatures and stimulates the diffusion of In deep into the film in the form of a monovalent interstitial site. The experimentally observed effects are interpreted on the assumption of the formation of In–As pairs in neighboring substitutional positions in the SiO2 matrix.
AB - The diffusion of indium atoms in silicon-dioxide films previously implanted with arsenic ions with different energies is studied in relation to the temperature of postimplantation annealing. It is established that the diffusion properties of indium depend on the presence of arsenic atoms in the film and their energy. An increase in the As content in the region of the average projective range of In+ ions prevents the diffusion of In towards the SiO2 film surface at high annealing temperatures and stimulates the diffusion of In deep into the film in the form of a monovalent interstitial site. The experimentally observed effects are interpreted on the assumption of the formation of In–As pairs in neighboring substitutional positions in the SiO2 matrix.
KW - arsenic
KW - diffusion
KW - indium
KW - ion implantation
KW - silicon oxide
UR - http://www.scopus.com/inward/record.url?scp=85103916911&partnerID=8YFLogxK
U2 - 10.1134/S1063782621030179
DO - 10.1134/S1063782621030179
M3 - Article
AN - SCOPUS:85103916911
VL - 55
SP - 289
EP - 295
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 3
ER -
ID: 28503350