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Diffusion of In Atoms in SiO₂ Films Implanted with As⁺ Ions

Research output: Contribution to journal › Article › peer-review

Department of Physics

DOI

https://doi.org/10.1134/S1063782621030179
Final published version

I. E. Tyschenko
M. Voelskow
Zh Si
V. P. Popov

Original language	English
Pages (from-to)	289-295
Number of pages	7
Journal	Semiconductors
Volume	55
Issue number	3
DOIs	https://doi.org/10.1134/S1063782621030179
Publication status	Published - Mar 2021

OECD FOS+WOS

2.05 MATERIALS ENGINEERING
1.03 PHYSICAL SCIENCES AND ASTRONOMY
1.03.UK PHYSICS, CONDENSED MATTER

Research areas

arsenic, diffusion, indium, ion implantation, silicon oxide

ID: 28503350