Standard

Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions. / Tyschenko, I. E.; Voelskow, M.; Si, Zh и др.

в: Semiconductors, Том 55, № 3, 03.2021, стр. 289-295.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Tyschenko, IE, Voelskow, M, Si, Z & Popov, VP 2021, 'Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions', Semiconductors, Том. 55, № 3, стр. 289-295. https://doi.org/10.1134/S1063782621030179

APA

Tyschenko, I. E., Voelskow, M., Si, Z., & Popov, V. P. (2021). Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions. Semiconductors, 55(3), 289-295. https://doi.org/10.1134/S1063782621030179

Vancouver

Tyschenko IE, Voelskow M, Si Z, Popov VP. Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions. Semiconductors. 2021 март;55(3):289-295. doi: 10.1134/S1063782621030179

Author

Tyschenko, I. E. ; Voelskow, M. ; Si, Zh и др. / Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions. в: Semiconductors. 2021 ; Том 55, № 3. стр. 289-295.

BibTeX

@article{b8ba3b58224d409e949dff1c86284967,
title = "Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions",
abstract = "The diffusion of indium atoms in silicon-dioxide films previously implanted with arsenic ions with different energies is studied in relation to the temperature of postimplantation annealing. It is established that the diffusion properties of indium depend on the presence of arsenic atoms in the film and their energy. An increase in the As content in the region of the average projective range of In+ ions prevents the diffusion of In towards the SiO2 film surface at high annealing temperatures and stimulates the diffusion of In deep into the film in the form of a monovalent interstitial site. The experimentally observed effects are interpreted on the assumption of the formation of In–As pairs in neighboring substitutional positions in the SiO2 matrix.",
keywords = "arsenic, diffusion, indium, ion implantation, silicon oxide",
author = "Tyschenko, {I. E.} and M. Voelskow and Zh Si and Popov, {V. P.}",
note = "Funding Information: The study was supported by the Ministry of Education and Science of the Russian Federation, government order no. 0306-2019-0005. Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2021",
month = mar,
doi = "10.1134/S1063782621030179",
language = "English",
volume = "55",
pages = "289--295",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "3",

}

RIS

TY - JOUR

T1 - Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions

AU - Tyschenko, I. E.

AU - Voelskow, M.

AU - Si, Zh

AU - Popov, V. P.

N1 - Funding Information: The study was supported by the Ministry of Education and Science of the Russian Federation, government order no. 0306-2019-0005. Publisher Copyright: © 2021, Pleiades Publishing, Ltd. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/3

Y1 - 2021/3

N2 - The diffusion of indium atoms in silicon-dioxide films previously implanted with arsenic ions with different energies is studied in relation to the temperature of postimplantation annealing. It is established that the diffusion properties of indium depend on the presence of arsenic atoms in the film and their energy. An increase in the As content in the region of the average projective range of In+ ions prevents the diffusion of In towards the SiO2 film surface at high annealing temperatures and stimulates the diffusion of In deep into the film in the form of a monovalent interstitial site. The experimentally observed effects are interpreted on the assumption of the formation of In–As pairs in neighboring substitutional positions in the SiO2 matrix.

AB - The diffusion of indium atoms in silicon-dioxide films previously implanted with arsenic ions with different energies is studied in relation to the temperature of postimplantation annealing. It is established that the diffusion properties of indium depend on the presence of arsenic atoms in the film and their energy. An increase in the As content in the region of the average projective range of In+ ions prevents the diffusion of In towards the SiO2 film surface at high annealing temperatures and stimulates the diffusion of In deep into the film in the form of a monovalent interstitial site. The experimentally observed effects are interpreted on the assumption of the formation of In–As pairs in neighboring substitutional positions in the SiO2 matrix.

KW - arsenic

KW - diffusion

KW - indium

KW - ion implantation

KW - silicon oxide

UR - http://www.scopus.com/inward/record.url?scp=85103916911&partnerID=8YFLogxK

U2 - 10.1134/S1063782621030179

DO - 10.1134/S1063782621030179

M3 - Article

AN - SCOPUS:85103916911

VL - 55

SP - 289

EP - 295

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 3

ER -

ID: 28503350