Charge transport mechanism in the forming-free memristor based on silicon nitride › Research Explorer

DOI

https://doi.org/10.1038/s41598-021-82159-7
Final published version

Andrei A. Gismatulin
Gennadiy N. Kamaev
Vladimir N. Kruchinin
Vladimir A. Gritsenko
Oleg M. Orlov
Albert Chin

Original language	English
Article number	2417
Journal	Scientific Reports
Volume	11
Issue number	1
DOIs	https://doi.org/10.1038/s41598-021-82159-7
Publication status	Published - 28 Jan 2021

OECD FOS+WOS

ID: 27709870