Charge Transport Mechanism in the Forming-Free Memristor Based on PECVD Silicon Oxynitride › Research Explorer

DOI

https://doi.org/10.3390/electronics12030598
Final published version

Andrei A. Gismatulin
Gennadiy N. Kamaev
Vladimir A. Volodin
Vladimir A. Gritsenko

Original language	English
Article number	598
Journal	Electronics (Switzerland)
Volume	12
Issue number	3
DOIs	https://doi.org/10.3390/electronics12030598
Publication status	Published - Feb 2023

OECD FOS+WOS

1.02.ET COMPUTER SCIENCE, INFORMATION SYSTEMS
2.02.IQ ENGINEERING, ELECTRICAL & ELECTRONIC
1.03.UB PHYSICS, APPLIED

Research areas

charge transport, memristors, silicon oxynitride

ID: 49727178