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Charge transport mechanism in SiNx-based memristor. / Gismatulin, A. A.; Gritsenko, V. A.; Yen, T. J. et al.

In: Applied Physics Letters, Vol. 115, No. 25, 253502, 16.12.2019.

Research output: Contribution to journal › Article › peer-review

Harvard

Gismatulin, AA, Gritsenko, VA, Yen, TJ & Chin, A 2019, 'Charge transport mechanism in SiNx-based memristor', Applied Physics Letters, vol. 115, no. 25, 253502. https://doi.org/10.1063/1.5127039

APA

Gismatulin, A. A., Gritsenko, V. A., Yen, T. J., & Chin, A. (2019). Charge transport mechanism in SiNx-based memristor. Applied Physics Letters, 115(25), [253502]. https://doi.org/10.1063/1.5127039

Vancouver

Gismatulin AA, Gritsenko VA, Yen TJ, Chin A. Charge transport mechanism in SiNx-based memristor. Applied Physics Letters. 2019 Dec 16;115(25):253502. doi: 10.1063/1.5127039

Author

Gismatulin, A. A. ; Gritsenko, V. A. ; Yen, T. J. et al. / Charge transport mechanism in SiNx-based memristor. In: Applied Physics Letters. 2019 ; Vol. 115, No. 25.

BibTeX

@article{29974e749696400e9af9a4dd01e37672,
title = "Charge transport mechanism in SiNx-based memristor",
abstract = "Amorphous silicon nitride is a key dielectric in silicon devices. The advantage of SiNx and Si3N4 over other dielectrics is that silicon nitride is compatible with silicon technology and is widely used in it. It is necessary to understand, experimentally and theoretically, the mechanism of charge transport in a memristor based on silicon nitride in the initial, high-resistance, and low-resistance states to develop a resistive memory element. At present, there is currently no single universal model of charge transport in a memristor based on silicon nitride. In our work, the charge transport of the initial, high, and low resistive states in an SiNx-based memristor is analyzed with four bulk-limited charge transport models. It is established that the Frenkel model of Coulomb traps ionization, Hill-Adachi model of overlapping Coulomb traps, and Makram-Ebeid and Lannoo model of multiphonon isolated traps ionization, quantitatively, do not describe the charge transport of the SiNx-based memristor in any state. The Nasyrov-Gritsenko model of phonon-assisted tunneling between traps gives a consistent explanation of the charge transport of the SiNx-based memristor in all states at temperatures above room temperature.",
keywords = "CONDUCTION, DIFFUSION",
author = "Gismatulin, {A. A.} and Gritsenko, {V. A.} and Yen, {T. J.} and A. Chin",
note = "Publisher Copyright: {\textcopyright} 2019 Author(s).",
year = "2019",
month = dec,
day = "16",
doi = "10.1063/1.5127039",
language = "English",
volume = "115",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "25",

}

RIS

TY - JOUR

T1 - Charge transport mechanism in SiNx-based memristor

AU - Gismatulin, A. A.

AU - Gritsenko, V. A.

AU - Yen, T. J.

AU - Chin, A.

N1 - Publisher Copyright: © 2019 Author(s).

PY - 2019/12/16

Y1 - 2019/12/16

N2 - Amorphous silicon nitride is a key dielectric in silicon devices. The advantage of SiNx and Si3N4 over other dielectrics is that silicon nitride is compatible with silicon technology and is widely used in it. It is necessary to understand, experimentally and theoretically, the mechanism of charge transport in a memristor based on silicon nitride in the initial, high-resistance, and low-resistance states to develop a resistive memory element. At present, there is currently no single universal model of charge transport in a memristor based on silicon nitride. In our work, the charge transport of the initial, high, and low resistive states in an SiNx-based memristor is analyzed with four bulk-limited charge transport models. It is established that the Frenkel model of Coulomb traps ionization, Hill-Adachi model of overlapping Coulomb traps, and Makram-Ebeid and Lannoo model of multiphonon isolated traps ionization, quantitatively, do not describe the charge transport of the SiNx-based memristor in any state. The Nasyrov-Gritsenko model of phonon-assisted tunneling between traps gives a consistent explanation of the charge transport of the SiNx-based memristor in all states at temperatures above room temperature.

AB - Amorphous silicon nitride is a key dielectric in silicon devices. The advantage of SiNx and Si3N4 over other dielectrics is that silicon nitride is compatible with silicon technology and is widely used in it. It is necessary to understand, experimentally and theoretically, the mechanism of charge transport in a memristor based on silicon nitride in the initial, high-resistance, and low-resistance states to develop a resistive memory element. At present, there is currently no single universal model of charge transport in a memristor based on silicon nitride. In our work, the charge transport of the initial, high, and low resistive states in an SiNx-based memristor is analyzed with four bulk-limited charge transport models. It is established that the Frenkel model of Coulomb traps ionization, Hill-Adachi model of overlapping Coulomb traps, and Makram-Ebeid and Lannoo model of multiphonon isolated traps ionization, quantitatively, do not describe the charge transport of the SiNx-based memristor in any state. The Nasyrov-Gritsenko model of phonon-assisted tunneling between traps gives a consistent explanation of the charge transport of the SiNx-based memristor in all states at temperatures above room temperature.

KW - CONDUCTION

KW - DIFFUSION

UR - http://www.scopus.com/inward/record.url?scp=85076961384&partnerID=8YFLogxK

U2 - 10.1063/1.5127039

DO - 10.1063/1.5127039

M3 - Article

AN - SCOPUS:85076961384

VL - 115

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 253502

ER -

ID: 22979326