Standard

Charge transport mechanism in periodic mesoporous organosilica low- k dielectric. / Gismatulin, A. A.; Gritsenko, V. A.; Seregin, D. S. et al.

In: Applied Physics Letters, Vol. 115, No. 8, 082904, 19.08.2019.

Research output: Contribution to journal › Article › peer-review

Harvard

Gismatulin, AA, Gritsenko, VA, Seregin, DS, Vorotilov, KA & Baklanov, MR 2019, 'Charge transport mechanism in periodic mesoporous organosilica low- k dielectric', Applied Physics Letters, vol. 115, no. 8, 082904. https://doi.org/10.1063/1.5113633

APA

Gismatulin, A. A., Gritsenko, V. A., Seregin, D. S., Vorotilov, K. A., & Baklanov, M. R. (2019). Charge transport mechanism in periodic mesoporous organosilica low- k dielectric. Applied Physics Letters, 115(8), [082904]. https://doi.org/10.1063/1.5113633

Vancouver

Gismatulin AA, Gritsenko VA, Seregin DS, Vorotilov KA, Baklanov MR. Charge transport mechanism in periodic mesoporous organosilica low- k dielectric. Applied Physics Letters. 2019 Aug 19;115(8):082904. doi: 10.1063/1.5113633

Author

Gismatulin, A. A. ; Gritsenko, V. A. ; Seregin, D. S. et al. / Charge transport mechanism in periodic mesoporous organosilica low- k dielectric. In: Applied Physics Letters. 2019 ; Vol. 115, No. 8.

BibTeX

@article{c9e425055f1d4c049b36fdbab446754c,
title = "Charge transport mechanism in periodic mesoporous organosilica low- k dielectric",
abstract = "Periodic mesoporous organosilicas are promising insulating materials for multilevel interconnects of integrated circuits because of their unique structural and mechanical properties. Therefore, understanding of their electrical characteristics, particularly the charge transport mechanism, is important. It is generally accepted that the thin dielectric film charge transport is limited by the Frenkel effect. In our work, the charge transport of the periodic mesoporous organosilica structure is analyzed with four volume-limited charge transport models. It is established that the Frenkel model of Coulomb trap ionization, the Hill-Adachi model of overlapping Coulomb potentials and the Makram-Ebeid and Lannoo model of multiphonon isolated traps ionization quantitatively, do not describe the charge transport of the periodic mesoporous organosilica low-k dielectric. The Nasyrov-Gritsenko model gives a consistent explanation of the charge transport of the periodic mesoporous organosilica low-k structure at different temperatures with the trap concentration N = 5.4 × 1020 cm-3 and effective mass m∗ = 0.82 me. The thermal trap energy Wt = 1.6 eV and the optical trap energy Wopt = 3.2 eV obtained from the simulation by the Nasyrov-Gritsenko model correspond to the Si-Si defect.",
keywords = "ELECTRON-EMISSION, SILICON DIOXIDE, CONDUCTION, FILMS, NITRIDE",
author = "Gismatulin, {A. A.} and Gritsenko, {V. A.} and Seregin, {D. S.} and Vorotilov, {K. A.} and Baklanov, {M. R.}",
year = "2019",
month = aug,
day = "19",
doi = "10.1063/1.5113633",
language = "English",
volume = "115",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "8",

}

RIS

TY - JOUR

T1 - Charge transport mechanism in periodic mesoporous organosilica low- k dielectric

AU - Gismatulin, A. A.

AU - Gritsenko, V. A.

AU - Seregin, D. S.

AU - Vorotilov, K. A.

AU - Baklanov, M. R.

PY - 2019/8/19

Y1 - 2019/8/19

N2 - Periodic mesoporous organosilicas are promising insulating materials for multilevel interconnects of integrated circuits because of their unique structural and mechanical properties. Therefore, understanding of their electrical characteristics, particularly the charge transport mechanism, is important. It is generally accepted that the thin dielectric film charge transport is limited by the Frenkel effect. In our work, the charge transport of the periodic mesoporous organosilica structure is analyzed with four volume-limited charge transport models. It is established that the Frenkel model of Coulomb trap ionization, the Hill-Adachi model of overlapping Coulomb potentials and the Makram-Ebeid and Lannoo model of multiphonon isolated traps ionization quantitatively, do not describe the charge transport of the periodic mesoporous organosilica low-k dielectric. The Nasyrov-Gritsenko model gives a consistent explanation of the charge transport of the periodic mesoporous organosilica low-k structure at different temperatures with the trap concentration N = 5.4 × 1020 cm-3 and effective mass m∗ = 0.82 me. The thermal trap energy Wt = 1.6 eV and the optical trap energy Wopt = 3.2 eV obtained from the simulation by the Nasyrov-Gritsenko model correspond to the Si-Si defect.

AB - Periodic mesoporous organosilicas are promising insulating materials for multilevel interconnects of integrated circuits because of their unique structural and mechanical properties. Therefore, understanding of their electrical characteristics, particularly the charge transport mechanism, is important. It is generally accepted that the thin dielectric film charge transport is limited by the Frenkel effect. In our work, the charge transport of the periodic mesoporous organosilica structure is analyzed with four volume-limited charge transport models. It is established that the Frenkel model of Coulomb trap ionization, the Hill-Adachi model of overlapping Coulomb potentials and the Makram-Ebeid and Lannoo model of multiphonon isolated traps ionization quantitatively, do not describe the charge transport of the periodic mesoporous organosilica low-k dielectric. The Nasyrov-Gritsenko model gives a consistent explanation of the charge transport of the periodic mesoporous organosilica low-k structure at different temperatures with the trap concentration N = 5.4 × 1020 cm-3 and effective mass m∗ = 0.82 me. The thermal trap energy Wt = 1.6 eV and the optical trap energy Wopt = 3.2 eV obtained from the simulation by the Nasyrov-Gritsenko model correspond to the Si-Si defect.

KW - ELECTRON-EMISSION

KW - SILICON DIOXIDE

KW - CONDUCTION

KW - FILMS

KW - NITRIDE

UR - http://www.scopus.com/inward/record.url?scp=85071278982&partnerID=8YFLogxK

U2 - 10.1063/1.5113633

DO - 10.1063/1.5113633

M3 - Article

AN - SCOPUS:85071278982

VL - 115

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

M1 - 082904

ER -

ID: 21346593