Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Charge transport mechanism in periodic mesoporous organosilica low- k dielectric. / Gismatulin, A. A.; Gritsenko, V. A.; Seregin, D. S. и др.
в: Applied Physics Letters, Том 115, № 8, 082904, 19.08.2019.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Charge transport mechanism in periodic mesoporous organosilica low- k dielectric
AU - Gismatulin, A. A.
AU - Gritsenko, V. A.
AU - Seregin, D. S.
AU - Vorotilov, K. A.
AU - Baklanov, M. R.
PY - 2019/8/19
Y1 - 2019/8/19
N2 - Periodic mesoporous organosilicas are promising insulating materials for multilevel interconnects of integrated circuits because of their unique structural and mechanical properties. Therefore, understanding of their electrical characteristics, particularly the charge transport mechanism, is important. It is generally accepted that the thin dielectric film charge transport is limited by the Frenkel effect. In our work, the charge transport of the periodic mesoporous organosilica structure is analyzed with four volume-limited charge transport models. It is established that the Frenkel model of Coulomb trap ionization, the Hill-Adachi model of overlapping Coulomb potentials and the Makram-Ebeid and Lannoo model of multiphonon isolated traps ionization quantitatively, do not describe the charge transport of the periodic mesoporous organosilica low-k dielectric. The Nasyrov-Gritsenko model gives a consistent explanation of the charge transport of the periodic mesoporous organosilica low-k structure at different temperatures with the trap concentration N = 5.4 × 1020 cm-3 and effective mass m∗ = 0.82 me. The thermal trap energy Wt = 1.6 eV and the optical trap energy Wopt = 3.2 eV obtained from the simulation by the Nasyrov-Gritsenko model correspond to the Si-Si defect.
AB - Periodic mesoporous organosilicas are promising insulating materials for multilevel interconnects of integrated circuits because of their unique structural and mechanical properties. Therefore, understanding of their electrical characteristics, particularly the charge transport mechanism, is important. It is generally accepted that the thin dielectric film charge transport is limited by the Frenkel effect. In our work, the charge transport of the periodic mesoporous organosilica structure is analyzed with four volume-limited charge transport models. It is established that the Frenkel model of Coulomb trap ionization, the Hill-Adachi model of overlapping Coulomb potentials and the Makram-Ebeid and Lannoo model of multiphonon isolated traps ionization quantitatively, do not describe the charge transport of the periodic mesoporous organosilica low-k dielectric. The Nasyrov-Gritsenko model gives a consistent explanation of the charge transport of the periodic mesoporous organosilica low-k structure at different temperatures with the trap concentration N = 5.4 × 1020 cm-3 and effective mass m∗ = 0.82 me. The thermal trap energy Wt = 1.6 eV and the optical trap energy Wopt = 3.2 eV obtained from the simulation by the Nasyrov-Gritsenko model correspond to the Si-Si defect.
KW - ELECTRON-EMISSION
KW - SILICON DIOXIDE
KW - CONDUCTION
KW - FILMS
KW - NITRIDE
UR - http://www.scopus.com/inward/record.url?scp=85071278982&partnerID=8YFLogxK
U2 - 10.1063/1.5113633
DO - 10.1063/1.5113633
M3 - Article
AN - SCOPUS:85071278982
VL - 115
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 8
M1 - 082904
ER -
ID: 21346593