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Charge transport mechanism in La:HfO2. / Gritsenko, V. A.; Gismatulin, A. A.

In: Applied Physics Letters, Vol. 117, No. 14, 142901, 05.10.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Gritsenko, VA & Gismatulin, AA 2020, 'Charge transport mechanism in La:HfO2', Applied Physics Letters, vol. 117, no. 14, 142901. https://doi.org/10.1063/5.0021779

APA

Gritsenko, V. A., & Gismatulin, A. A. (2020). Charge transport mechanism in La:HfO2. Applied Physics Letters, 117(14), [142901]. https://doi.org/10.1063/5.0021779

Vancouver

Gritsenko VA, Gismatulin AA. Charge transport mechanism in La:HfO2. Applied Physics Letters. 2020 Oct 5;117(14):142901. doi: 10.1063/5.0021779

Author

Gritsenko, V. A. ; Gismatulin, A. A. / Charge transport mechanism in La:HfO2. In: Applied Physics Letters. 2020 ; Vol. 117, No. 14.

BibTeX

@article{84f043187ad64844856bba7b68b5e5b4,
title = "Charge transport mechanism in La:HfO2",
abstract = "Currently, it is generally accepted that the charge transport in dielectrics is limited by the Coulomb trap ionization in a strong electric field (Frenkel effect). In the present work, the charge transport mechanism in La:HfO2 was experimentally studied, and four theoretical conductivity models-the Frenkel effect of Coulomb trap ionization, Hill-Adachi model of overlapping Coulomb potentials, Makram-Ebeid and Lannoo model of multiphonon isolated trap ionization, and Nasyrov-Gritsenko phonon-assisted tunneling between traps-were quantitatively analyzed. It was shown that the charge transport mechanism in La: HfO2 is qualitatively described by the Frenkel effect, but the Frenkel effect predicts an abnormally low trap concentration value and a large high-frequency dielectric constant value, which is not consistent with the experiment. The charge transport in La:HfO2 is quantitatively described by the model of phonon-assisted tunneling between neighboring traps. ",
keywords = "ATOMIC LAYER DEPOSITION, CONDUCTION, NITRIDE, FILMS",
author = "Gritsenko, {V. A.} and Gismatulin, {A. A.}",
year = "2020",
month = oct,
day = "5",
doi = "10.1063/5.0021779",
language = "English",
volume = "117",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "14",

}

RIS

TY - JOUR

T1 - Charge transport mechanism in La:HfO2

AU - Gritsenko, V. A.

AU - Gismatulin, A. A.

PY - 2020/10/5

Y1 - 2020/10/5

N2 - Currently, it is generally accepted that the charge transport in dielectrics is limited by the Coulomb trap ionization in a strong electric field (Frenkel effect). In the present work, the charge transport mechanism in La:HfO2 was experimentally studied, and four theoretical conductivity models-the Frenkel effect of Coulomb trap ionization, Hill-Adachi model of overlapping Coulomb potentials, Makram-Ebeid and Lannoo model of multiphonon isolated trap ionization, and Nasyrov-Gritsenko phonon-assisted tunneling between traps-were quantitatively analyzed. It was shown that the charge transport mechanism in La: HfO2 is qualitatively described by the Frenkel effect, but the Frenkel effect predicts an abnormally low trap concentration value and a large high-frequency dielectric constant value, which is not consistent with the experiment. The charge transport in La:HfO2 is quantitatively described by the model of phonon-assisted tunneling between neighboring traps.

AB - Currently, it is generally accepted that the charge transport in dielectrics is limited by the Coulomb trap ionization in a strong electric field (Frenkel effect). In the present work, the charge transport mechanism in La:HfO2 was experimentally studied, and four theoretical conductivity models-the Frenkel effect of Coulomb trap ionization, Hill-Adachi model of overlapping Coulomb potentials, Makram-Ebeid and Lannoo model of multiphonon isolated trap ionization, and Nasyrov-Gritsenko phonon-assisted tunneling between traps-were quantitatively analyzed. It was shown that the charge transport mechanism in La: HfO2 is qualitatively described by the Frenkel effect, but the Frenkel effect predicts an abnormally low trap concentration value and a large high-frequency dielectric constant value, which is not consistent with the experiment. The charge transport in La:HfO2 is quantitatively described by the model of phonon-assisted tunneling between neighboring traps.

KW - ATOMIC LAYER DEPOSITION

KW - CONDUCTION

KW - NITRIDE

KW - FILMS

UR - http://www.scopus.com/inward/record.url?scp=85092266331&partnerID=8YFLogxK

U2 - 10.1063/5.0021779

DO - 10.1063/5.0021779

M3 - Article

AN - SCOPUS:85092266331

VL - 117

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 142901

ER -

ID: 25687205