Standard

Charge transport mechanism in dielectrics : drift and diffusion of trapped charge carriers. / Pil’nik, Andrey A.; Chernov, Andrey A.; Islamov, Damir R.

In: Scientific Reports, Vol. 10, No. 1, 15759, 01.12.2020.

Research output: Contribution to journalArticlepeer-review

Harvard

APA

Vancouver

Pil’nik AA, Chernov AA, Islamov DR. Charge transport mechanism in dielectrics: drift and diffusion of trapped charge carriers. Scientific Reports. 2020 Dec 1;10(1):15759. doi: 10.1038/s41598-020-72615-1

Author

BibTeX

@article{a49ec10caf58416d8f6aac77d9d39d35,
title = "Charge transport mechanism in dielectrics: drift and diffusion of trapped charge carriers",
abstract = "In this study, we developed a continuum theory of the charge transport in dielectrics by trapped electrons and holes, which takes into account two separate contributions of the current of trapped charge carriers: the drift part and the diffusion one. It was shown that drift current is mostly dominant in the bulk, while the diffusion one reaches significant values near contacts. A comparison with other theoretical models and experiments shows a good agreement. The model can be extended to two- and three-dimensional systems. The developed model, formulated in partial differential equations, can be numerically implemented in the finite element method code.",
keywords = "ELECTRICAL-CONDUCTIVITY, NONVOLATILE MEMORY, CONSTANT, EMISSION, MODEL",
author = "Pil{\textquoteright}nik, {Andrey A.} and Chernov, {Andrey A.} and Islamov, {Damir R.}",
year = "2020",
month = dec,
day = "1",
doi = "10.1038/s41598-020-72615-1",
language = "English",
volume = "10",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
number = "1",

}

RIS

TY - JOUR

T1 - Charge transport mechanism in dielectrics

T2 - drift and diffusion of trapped charge carriers

AU - Pil’nik, Andrey A.

AU - Chernov, Andrey A.

AU - Islamov, Damir R.

PY - 2020/12/1

Y1 - 2020/12/1

N2 - In this study, we developed a continuum theory of the charge transport in dielectrics by trapped electrons and holes, which takes into account two separate contributions of the current of trapped charge carriers: the drift part and the diffusion one. It was shown that drift current is mostly dominant in the bulk, while the diffusion one reaches significant values near contacts. A comparison with other theoretical models and experiments shows a good agreement. The model can be extended to two- and three-dimensional systems. The developed model, formulated in partial differential equations, can be numerically implemented in the finite element method code.

AB - In this study, we developed a continuum theory of the charge transport in dielectrics by trapped electrons and holes, which takes into account two separate contributions of the current of trapped charge carriers: the drift part and the diffusion one. It was shown that drift current is mostly dominant in the bulk, while the diffusion one reaches significant values near contacts. A comparison with other theoretical models and experiments shows a good agreement. The model can be extended to two- and three-dimensional systems. The developed model, formulated in partial differential equations, can be numerically implemented in the finite element method code.

KW - ELECTRICAL-CONDUCTIVITY

KW - NONVOLATILE MEMORY

KW - CONSTANT

KW - EMISSION

KW - MODEL

UR - http://www.scopus.com/inward/record.url?scp=85091476911&partnerID=8YFLogxK

U2 - 10.1038/s41598-020-72615-1

DO - 10.1038/s41598-020-72615-1

M3 - Article

C2 - 32978427

AN - SCOPUS:85091476911

VL - 10

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 15759

ER -

ID: 25585676