TY - JOUR

T1 - Charge Transport in Amorphous Silicon Nitride

AU - Novikov, Yu N.

AU - Gritsenko, V. A.

N1 - Funding Information: The samples were prepared with the support from the Russian Foundation for Basic Research (project no. 19-29-03018); experiments were supported by the Russian Science Foundation (project no. 19-19-00286); simulation of experimental data was performed under the State assignments no. 0242-2021-0003 for the Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences. Publisher Copyright: © 2021, Pleiades Publishing, Inc.

PY - 2021/10

Y1 - 2021/10

N2 - Charge transport in amorphous silicon nitride (Si3N4) is studied experimentally in a wide range of electric fields and temperatures. The experimental data are compared with the results of numerical calculations. To describe the ionization of deep centers (traps) in Si3N4, the Frenkel effect is used with the account for thermally assisted tunneling and the multiphonon mechanism. It is shown that the Frenkel effect with allowance for thermally assisted tunneling formally describes the experiment. However, an anomalously small frequency factor (109 s–1) and a large effective tunneling mass (3m0) must be used in calculations in this case. A satisfactory agreement between the results of experiments and calculations was attained using the theory of multiphonon ionization of traps with the following parameters: (Formula presented.), and Ne,h = 6 × 1018 cm–3, which correspond to the thermal energy, optical energy, phonon energy, tunneling effective mass, and concentrations of electron and hole traps, respectively.

AB - Charge transport in amorphous silicon nitride (Si3N4) is studied experimentally in a wide range of electric fields and temperatures. The experimental data are compared with the results of numerical calculations. To describe the ionization of deep centers (traps) in Si3N4, the Frenkel effect is used with the account for thermally assisted tunneling and the multiphonon mechanism. It is shown that the Frenkel effect with allowance for thermally assisted tunneling formally describes the experiment. However, an anomalously small frequency factor (109 s–1) and a large effective tunneling mass (3m0) must be used in calculations in this case. A satisfactory agreement between the results of experiments and calculations was attained using the theory of multiphonon ionization of traps with the following parameters: (Formula presented.), and Ne,h = 6 × 1018 cm–3, which correspond to the thermal energy, optical energy, phonon energy, tunneling effective mass, and concentrations of electron and hole traps, respectively.

UR - http://www.scopus.com/inward/record.url?scp=85119849038&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/60b5f3f8-b7c7-3527-a33a-bef46499928b/

U2 - 10.1134/S1063776121100046

DO - 10.1134/S1063776121100046

M3 - Article

AN - SCOPUS:85119849038

VL - 133

SP - 488

EP - 493

JO - Journal of Experimental and Theoretical Physics

JF - Journal of Experimental and Theoretical Physics

SN - 1063-7761

IS - 4

M1 - 13

ER -