Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Charge Transport in Amorphous Silicon Nitride. / Novikov, Yu N.; Gritsenko, V. A.
в: Journal of Experimental and Theoretical Physics, Том 133, № 4, 13, 10.2021, стр. 488-493.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Charge Transport in Amorphous Silicon Nitride
AU - Novikov, Yu N.
AU - Gritsenko, V. A.
N1 - Funding Information: The samples were prepared with the support from the Russian Foundation for Basic Research (project no. 19-29-03018); experiments were supported by the Russian Science Foundation (project no. 19-19-00286); simulation of experimental data was performed under the State assignments no. 0242-2021-0003 for the Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences. Publisher Copyright: © 2021, Pleiades Publishing, Inc.
PY - 2021/10
Y1 - 2021/10
N2 - Charge transport in amorphous silicon nitride (Si3N4) is studied experimentally in a wide range of electric fields and temperatures. The experimental data are compared with the results of numerical calculations. To describe the ionization of deep centers (traps) in Si3N4, the Frenkel effect is used with the account for thermally assisted tunneling and the multiphonon mechanism. It is shown that the Frenkel effect with allowance for thermally assisted tunneling formally describes the experiment. However, an anomalously small frequency factor (109 s–1) and a large effective tunneling mass (3m0) must be used in calculations in this case. A satisfactory agreement between the results of experiments and calculations was attained using the theory of multiphonon ionization of traps with the following parameters: (Formula presented.), and Ne,h = 6 × 1018 cm–3, which correspond to the thermal energy, optical energy, phonon energy, tunneling effective mass, and concentrations of electron and hole traps, respectively.
AB - Charge transport in amorphous silicon nitride (Si3N4) is studied experimentally in a wide range of electric fields and temperatures. The experimental data are compared with the results of numerical calculations. To describe the ionization of deep centers (traps) in Si3N4, the Frenkel effect is used with the account for thermally assisted tunneling and the multiphonon mechanism. It is shown that the Frenkel effect with allowance for thermally assisted tunneling formally describes the experiment. However, an anomalously small frequency factor (109 s–1) and a large effective tunneling mass (3m0) must be used in calculations in this case. A satisfactory agreement between the results of experiments and calculations was attained using the theory of multiphonon ionization of traps with the following parameters: (Formula presented.), and Ne,h = 6 × 1018 cm–3, which correspond to the thermal energy, optical energy, phonon energy, tunneling effective mass, and concentrations of electron and hole traps, respectively.
UR - http://www.scopus.com/inward/record.url?scp=85119849038&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/60b5f3f8-b7c7-3527-a33a-bef46499928b/
U2 - 10.1134/S1063776121100046
DO - 10.1134/S1063776121100046
M3 - Article
AN - SCOPUS:85119849038
VL - 133
SP - 488
EP - 493
JO - Journal of Experimental and Theoretical Physics
JF - Journal of Experimental and Theoretical Physics
SN - 1063-7761
IS - 4
M1 - 13
ER -
ID: 34860362