Change in the InSb nanocrystal growth direction at the Si/SiO2 interface during ion-beam synthesis › Research Explorer

DOI

https://doi.org/10.1016/j.matlet.2024.137114
Final published version

Ida Tyschenko
Anton Gutakovskii
Ruonan Zhang
Vladimir Vdovin
Vladimir Volodin
Vladimir Popov

Original language	English
Article number	137114
Number of pages	3
Journal	Materials Letters
Volume	373
DOIs	https://doi.org/10.1016/j.matlet.2024.137114
Publication status	Published - 15 Oct 2024

Research areas

InSb, Ion implantation, Nanocrystals, Si/SiO2 interface, Silicon-on-insulator

OECD FOS+WOS

1.03.UB PHYSICS, APPLIED
2.05.PM MATERIALS SCIENCE, MULTIDISCIPLINARY

ID: 60391116