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Atomic Processes on the Silicon Surface. / Latyshev, Alexander V.; Fedina, L. I.; Kosolobov, S. S. et al.

Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. ed. / AV Latyshev; AV Dvurechenskii; AL Aseev. Elsevier Science Inc., 2017. p. 189-221.

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

Harvard

Latyshev, AV, Fedina, LI, Kosolobov, SS, Sitnikov, SV, Rogilo, DI, Rodyakina, EE, Nasimov, DA, Sheglov, DV & Aseev, AL 2017, Atomic Processes on the Silicon Surface. in AV Latyshev, AV Dvurechenskii & AL Aseev (eds), Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Inc., pp. 189-221. https://doi.org/10.1016/B978-0-12-810512-2.00008-1

APA

Latyshev, A. V., Fedina, L. I., Kosolobov, S. S., Sitnikov, S. V., Rogilo, D. I., Rodyakina, E. E., Nasimov, D. A., Sheglov, D. V., & Aseev, A. L. (2017). Atomic Processes on the Silicon Surface. In AV. Latyshev, AV. Dvurechenskii, & AL. Aseev (Eds.), Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications (pp. 189-221). Elsevier Science Inc.. https://doi.org/10.1016/B978-0-12-810512-2.00008-1

Vancouver

Latyshev AV, Fedina LI, Kosolobov SS, Sitnikov SV, Rogilo DI, Rodyakina EE et al. Atomic Processes on the Silicon Surface. In Latyshev AV, Dvurechenskii AV, Aseev AL, editors, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Inc. 2017. p. 189-221 doi: 10.1016/B978-0-12-810512-2.00008-1

Author

Latyshev, Alexander V. ; Fedina, L. I. ; Kosolobov, S. S. et al. / Atomic Processes on the Silicon Surface. Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. editor / AV Latyshev ; AV Dvurechenskii ; AL Aseev. Elsevier Science Inc., 2017. pp. 189-221

BibTeX

@inbook{9ab1c201344b42ccaf8278bfb1491dec,
title = "Atomic Processes on the Silicon Surface",
abstract = "In this chapter the ability to study atomic processes on the Si surface during sublimation, growth, oxygen etching, and gold adsorption by in situ ultrahigh vacuum reflection electron microscopy (a unique method developed in ISP SB RAS) are reviewed. Using this technique, a surface instability called the step-bunching phenomenon was discovered previously, it is however, still poorly understood due to many unknown parameters of adatom/advacancy step interactions. Observation of gold adsorption induced step-bunching depending on an annealing time at a temperature of T=900°C suggests that a surface-bulk defect exchange is also involved in the formation of instability. The dynamics of two-dimensional vacancy island formation on 120-μm step-free terraces shows that sublimation is defined by adatom detachment from steps up to a critical temperature of Tcrit~1180°C, while adatom diffusion length falls from ~55 (970°C) to ~7μm due to recombination with the vacancies. At Tcrit>1180°C, sublimation is dominated by the straightforward evaporation of surface atoms reserving vacancies that interact with steps. From the studies of Si growth on the step-bunched Si(111)-(7×7) surface, a crucial role of step permeability in 2D island nucleation and growth (2DNG) kinetics has been revealed. Step permeability is a key factor in pyramid-like growth on terraces exceeding the critical width for 2DNG. We show that quantitative parameters of adatom/vacancy diffusion and their interactions with steps (Schw{\"o}bel barriers) can be determined.",
keywords = "In situ REM, Monatomic steps, Schw{\"o}bel barriers pyramid-like growth, Step-bunches, Surface instabilities, Two-dimensional nucleation and growth, Vacancies, SI(111) STEPPED SURFACE, CLEAN SI(111), IN-SITU REM, REFLECTION ELECTRON-MICROSCOPY, ELEVATED-TEMPERATURES, VICINAL SI(111), SCANNING-TUNNELING-MICROSCOPY, THIN-FILM GROWTH, ULTRAHIGH-VACUUM, INITIAL-STAGES",
author = "Latyshev, {Alexander V.} and Fedina, {L. I.} and Kosolobov, {S. S.} and Sitnikov, {S. V.} and Rogilo, {D. I.} and Rodyakina, {E. E.} and Nasimov, {D. A.} and Sheglov, {D. V.} and Aseev, {Alexander L.}",
note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Inc. All rights reserved.",
year = "2017",
month = jan,
day = "1",
doi = "10.1016/B978-0-12-810512-2.00008-1",
language = "English",
isbn = "9780128105122",
pages = "189--221",
editor = "AV Latyshev and AV Dvurechenskii and AL Aseev",
booktitle = "Advances in Semiconductor Nanostructures",
publisher = "Elsevier Science Inc.",
address = "United States",

}

RIS

TY - CHAP

T1 - Atomic Processes on the Silicon Surface

AU - Latyshev, Alexander V.

AU - Fedina, L. I.

AU - Kosolobov, S. S.

AU - Sitnikov, S. V.

AU - Rogilo, D. I.

AU - Rodyakina, E. E.

AU - Nasimov, D. A.

AU - Sheglov, D. V.

AU - Aseev, Alexander L.

N1 - Publisher Copyright: © 2017 Elsevier Inc. All rights reserved.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - In this chapter the ability to study atomic processes on the Si surface during sublimation, growth, oxygen etching, and gold adsorption by in situ ultrahigh vacuum reflection electron microscopy (a unique method developed in ISP SB RAS) are reviewed. Using this technique, a surface instability called the step-bunching phenomenon was discovered previously, it is however, still poorly understood due to many unknown parameters of adatom/advacancy step interactions. Observation of gold adsorption induced step-bunching depending on an annealing time at a temperature of T=900°C suggests that a surface-bulk defect exchange is also involved in the formation of instability. The dynamics of two-dimensional vacancy island formation on 120-μm step-free terraces shows that sublimation is defined by adatom detachment from steps up to a critical temperature of Tcrit~1180°C, while adatom diffusion length falls from ~55 (970°C) to ~7μm due to recombination with the vacancies. At Tcrit>1180°C, sublimation is dominated by the straightforward evaporation of surface atoms reserving vacancies that interact with steps. From the studies of Si growth on the step-bunched Si(111)-(7×7) surface, a crucial role of step permeability in 2D island nucleation and growth (2DNG) kinetics has been revealed. Step permeability is a key factor in pyramid-like growth on terraces exceeding the critical width for 2DNG. We show that quantitative parameters of adatom/vacancy diffusion and their interactions with steps (Schwöbel barriers) can be determined.

AB - In this chapter the ability to study atomic processes on the Si surface during sublimation, growth, oxygen etching, and gold adsorption by in situ ultrahigh vacuum reflection electron microscopy (a unique method developed in ISP SB RAS) are reviewed. Using this technique, a surface instability called the step-bunching phenomenon was discovered previously, it is however, still poorly understood due to many unknown parameters of adatom/advacancy step interactions. Observation of gold adsorption induced step-bunching depending on an annealing time at a temperature of T=900°C suggests that a surface-bulk defect exchange is also involved in the formation of instability. The dynamics of two-dimensional vacancy island formation on 120-μm step-free terraces shows that sublimation is defined by adatom detachment from steps up to a critical temperature of Tcrit~1180°C, while adatom diffusion length falls from ~55 (970°C) to ~7μm due to recombination with the vacancies. At Tcrit>1180°C, sublimation is dominated by the straightforward evaporation of surface atoms reserving vacancies that interact with steps. From the studies of Si growth on the step-bunched Si(111)-(7×7) surface, a crucial role of step permeability in 2D island nucleation and growth (2DNG) kinetics has been revealed. Step permeability is a key factor in pyramid-like growth on terraces exceeding the critical width for 2DNG. We show that quantitative parameters of adatom/vacancy diffusion and their interactions with steps (Schwöbel barriers) can be determined.

KW - In situ REM

KW - Monatomic steps

KW - Schwöbel barriers pyramid-like growth

KW - Step-bunches

KW - Surface instabilities

KW - Two-dimensional nucleation and growth

KW - Vacancies

KW - SI(111) STEPPED SURFACE

KW - CLEAN SI(111)

KW - IN-SITU REM

KW - REFLECTION ELECTRON-MICROSCOPY

KW - ELEVATED-TEMPERATURES

KW - VICINAL SI(111)

KW - SCANNING-TUNNELING-MICROSCOPY

KW - THIN-FILM GROWTH

KW - ULTRAHIGH-VACUUM

KW - INITIAL-STAGES

UR - http://www.scopus.com/inward/record.url?scp=85022200054&partnerID=8YFLogxK

U2 - 10.1016/B978-0-12-810512-2.00008-1

DO - 10.1016/B978-0-12-810512-2.00008-1

M3 - Chapter

SN - 9780128105122

SP - 189

EP - 221

BT - Advances in Semiconductor Nanostructures

A2 - Latyshev, AV

A2 - Dvurechenskii, AV

A2 - Aseev, AL

PB - Elsevier Science Inc.

ER -

ID: 21753520