Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › глава/раздел › научная › Рецензирование
Atomic Processes on the Silicon Surface. / Latyshev, Alexander V.; Fedina, L. I.; Kosolobov, S. S. и др.
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. ред. / AV Latyshev; AV Dvurechenskii; AL Aseev. Elsevier Science Inc., 2017. стр. 189-221.Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › глава/раздел › научная › Рецензирование
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TY - CHAP
T1 - Atomic Processes on the Silicon Surface
AU - Latyshev, Alexander V.
AU - Fedina, L. I.
AU - Kosolobov, S. S.
AU - Sitnikov, S. V.
AU - Rogilo, D. I.
AU - Rodyakina, E. E.
AU - Nasimov, D. A.
AU - Sheglov, D. V.
AU - Aseev, Alexander L.
N1 - Publisher Copyright: © 2017 Elsevier Inc. All rights reserved.
PY - 2017/1/1
Y1 - 2017/1/1
N2 - In this chapter the ability to study atomic processes on the Si surface during sublimation, growth, oxygen etching, and gold adsorption by in situ ultrahigh vacuum reflection electron microscopy (a unique method developed in ISP SB RAS) are reviewed. Using this technique, a surface instability called the step-bunching phenomenon was discovered previously, it is however, still poorly understood due to many unknown parameters of adatom/advacancy step interactions. Observation of gold adsorption induced step-bunching depending on an annealing time at a temperature of T=900°C suggests that a surface-bulk defect exchange is also involved in the formation of instability. The dynamics of two-dimensional vacancy island formation on 120-μm step-free terraces shows that sublimation is defined by adatom detachment from steps up to a critical temperature of Tcrit~1180°C, while adatom diffusion length falls from ~55 (970°C) to ~7μm due to recombination with the vacancies. At Tcrit>1180°C, sublimation is dominated by the straightforward evaporation of surface atoms reserving vacancies that interact with steps. From the studies of Si growth on the step-bunched Si(111)-(7×7) surface, a crucial role of step permeability in 2D island nucleation and growth (2DNG) kinetics has been revealed. Step permeability is a key factor in pyramid-like growth on terraces exceeding the critical width for 2DNG. We show that quantitative parameters of adatom/vacancy diffusion and their interactions with steps (Schwöbel barriers) can be determined.
AB - In this chapter the ability to study atomic processes on the Si surface during sublimation, growth, oxygen etching, and gold adsorption by in situ ultrahigh vacuum reflection electron microscopy (a unique method developed in ISP SB RAS) are reviewed. Using this technique, a surface instability called the step-bunching phenomenon was discovered previously, it is however, still poorly understood due to many unknown parameters of adatom/advacancy step interactions. Observation of gold adsorption induced step-bunching depending on an annealing time at a temperature of T=900°C suggests that a surface-bulk defect exchange is also involved in the formation of instability. The dynamics of two-dimensional vacancy island formation on 120-μm step-free terraces shows that sublimation is defined by adatom detachment from steps up to a critical temperature of Tcrit~1180°C, while adatom diffusion length falls from ~55 (970°C) to ~7μm due to recombination with the vacancies. At Tcrit>1180°C, sublimation is dominated by the straightforward evaporation of surface atoms reserving vacancies that interact with steps. From the studies of Si growth on the step-bunched Si(111)-(7×7) surface, a crucial role of step permeability in 2D island nucleation and growth (2DNG) kinetics has been revealed. Step permeability is a key factor in pyramid-like growth on terraces exceeding the critical width for 2DNG. We show that quantitative parameters of adatom/vacancy diffusion and their interactions with steps (Schwöbel barriers) can be determined.
KW - In situ REM
KW - Monatomic steps
KW - Schwöbel barriers pyramid-like growth
KW - Step-bunches
KW - Surface instabilities
KW - Two-dimensional nucleation and growth
KW - Vacancies
KW - SI(111) STEPPED SURFACE
KW - CLEAN SI(111)
KW - IN-SITU REM
KW - REFLECTION ELECTRON-MICROSCOPY
KW - ELEVATED-TEMPERATURES
KW - VICINAL SI(111)
KW - SCANNING-TUNNELING-MICROSCOPY
KW - THIN-FILM GROWTH
KW - ULTRAHIGH-VACUUM
KW - INITIAL-STAGES
UR - http://www.scopus.com/inward/record.url?scp=85022200054&partnerID=8YFLogxK
U2 - 10.1016/B978-0-12-810512-2.00008-1
DO - 10.1016/B978-0-12-810512-2.00008-1
M3 - Chapter
SN - 9780128105122
SP - 189
EP - 221
BT - Advances in Semiconductor Nanostructures
A2 - Latyshev, AV
A2 - Dvurechenskii, AV
A2 - Aseev, AL
PB - Elsevier Science Inc.
ER -
ID: 21753520