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Atomic Force Microscopy Local Oxidation of GeO Thin Films. / Astankova, K. N.; Kozhukhov, A. S.; Gorokhov, E. B. et al.

In: Semiconductors, Vol. 52, No. 16, 01.12.2018, p. 2081-2084.

Research output: Contribution to journal › Article › peer-review

Harvard

Astankova, KN, Kozhukhov, AS, Gorokhov, EB, Azarov, IA & Latyshev, AV 2018, 'Atomic Force Microscopy Local Oxidation of GeO Thin Films', Semiconductors, vol. 52, no. 16, pp. 2081-2084. https://doi.org/10.1134/S1063782618160030

APA

Astankova, K. N., Kozhukhov, A. S., Gorokhov, E. B., Azarov, I. A., & Latyshev, A. V. (2018). Atomic Force Microscopy Local Oxidation of GeO Thin Films. Semiconductors, 52(16), 2081-2084. https://doi.org/10.1134/S1063782618160030

Vancouver

Astankova KN, Kozhukhov AS, Gorokhov EB, Azarov IA, Latyshev AV. Atomic Force Microscopy Local Oxidation of GeO Thin Films. Semiconductors. 2018 Dec 1;52(16):2081-2084. doi: 10.1134/S1063782618160030

Author

Astankova, K. N. ; Kozhukhov, A. S. ; Gorokhov, E. B. et al. / Atomic Force Microscopy Local Oxidation of GeO Thin Films. In: Semiconductors. 2018 ; Vol. 52, No. 16. pp. 2081-2084.

BibTeX

@article{0487c0716f214df68aa22033db6fc405,
title = "Atomic Force Microscopy Local Oxidation of GeO Thin Films",
abstract = "Abstract: Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for atomic force microscope (AFM) oxidation lithography. The kinetics of GeO layer oxidation performed in the tapping mode of AFM was found to have a logarithmic relationship to oxide height versus pulse duration. Effect of humidity on oxidation of germanium monoxide thin films was studied at relative humidity 40, 60, 80%. When local anodic oxidation of GeO layer was carried out by AFM operating in the contact mode in high voltage (≥9 V) regime and at high relative humidity (RH = 80%), the size and shape of fabricated oxide was changed drastically.",
keywords = "NANO-OXIDATION, HUMIDITY",
author = "Astankova, {K. N.} and Kozhukhov, {A. S.} and Gorokhov, {E. B.} and Azarov, {I. A.} and Latyshev, {A. V.}",
note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",
year = "2018",
month = dec,
day = "1",
doi = "10.1134/S1063782618160030",
language = "English",
volume = "52",
pages = "2081--2084",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "16",

}

RIS

TY - JOUR

T1 - Atomic Force Microscopy Local Oxidation of GeO Thin Films

AU - Astankova, K. N.

AU - Kozhukhov, A. S.

AU - Gorokhov, E. B.

AU - Azarov, I. A.

AU - Latyshev, A. V.

N1 - Publisher Copyright: © 2018, Pleiades Publishing, Ltd.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Abstract: Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for atomic force microscope (AFM) oxidation lithography. The kinetics of GeO layer oxidation performed in the tapping mode of AFM was found to have a logarithmic relationship to oxide height versus pulse duration. Effect of humidity on oxidation of germanium monoxide thin films was studied at relative humidity 40, 60, 80%. When local anodic oxidation of GeO layer was carried out by AFM operating in the contact mode in high voltage (≥9 V) regime and at high relative humidity (RH = 80%), the size and shape of fabricated oxide was changed drastically.

AB - Abstract: Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for atomic force microscope (AFM) oxidation lithography. The kinetics of GeO layer oxidation performed in the tapping mode of AFM was found to have a logarithmic relationship to oxide height versus pulse duration. Effect of humidity on oxidation of germanium monoxide thin films was studied at relative humidity 40, 60, 80%. When local anodic oxidation of GeO layer was carried out by AFM operating in the contact mode in high voltage (≥9 V) regime and at high relative humidity (RH = 80%), the size and shape of fabricated oxide was changed drastically.

KW - NANO-OXIDATION

KW - HUMIDITY

UR - http://www.scopus.com/inward/record.url?scp=85062150420&partnerID=8YFLogxK

U2 - 10.1134/S1063782618160030

DO - 10.1134/S1063782618160030

M3 - Article

AN - SCOPUS:85062150420

VL - 52

SP - 2081

EP - 2084

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 16

ER -

ID: 18626674