TY - JOUR

T1 - Atomic Force Microscopy Local Oxidation of GeO Thin Films

AU - Astankova, K. N.

AU - Kozhukhov, A. S.

AU - Gorokhov, E. B.

AU - Azarov, I. A.

AU - Latyshev, A. V.

N1 - Publisher Copyright: © 2018, Pleiades Publishing, Ltd.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Abstract: Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for atomic force microscope (AFM) oxidation lithography. The kinetics of GeO layer oxidation performed in the tapping mode of AFM was found to have a logarithmic relationship to oxide height versus pulse duration. Effect of humidity on oxidation of germanium monoxide thin films was studied at relative humidity 40, 60, 80%. When local anodic oxidation of GeO layer was carried out by AFM operating in the contact mode in high voltage (≥9 V) regime and at high relative humidity (RH = 80%), the size and shape of fabricated oxide was changed drastically.

AB - Abstract: Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for atomic force microscope (AFM) oxidation lithography. The kinetics of GeO layer oxidation performed in the tapping mode of AFM was found to have a logarithmic relationship to oxide height versus pulse duration. Effect of humidity on oxidation of germanium monoxide thin films was studied at relative humidity 40, 60, 80%. When local anodic oxidation of GeO layer was carried out by AFM operating in the contact mode in high voltage (≥9 V) regime and at high relative humidity (RH = 80%), the size and shape of fabricated oxide was changed drastically.

KW - NANO-OXIDATION

KW - HUMIDITY

UR - http://www.scopus.com/inward/record.url?scp=85062150420&partnerID=8YFLogxK

U2 - 10.1134/S1063782618160030

DO - 10.1134/S1063782618160030

M3 - Article

AN - SCOPUS:85062150420

VL - 52

SP - 2081

EP - 2084

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 16

ER -