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Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma. / Perevalov, T. V.; Iskhakzai, R. M.Kh; Aliev, V. Sh et al.

In: Journal of Experimental and Theoretical Physics, Vol. 131, No. 6, 12.2020, p. 940-944.

Research output: Contribution to journal › Article › peer-review

Harvard

Perevalov, TV, Iskhakzai, RMK, Aliev, VS, Gritsenko, VA & Prosvirin, IP 2020, 'Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma', Journal of Experimental and Theoretical Physics, vol. 131, no. 6, pp. 940-944. https://doi.org/10.1134/S1063776120110084

APA

Perevalov, T. V., Iskhakzai, R. M. K., Aliev, V. S., Gritsenko, V. A., & Prosvirin, I. P. (2020). Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma. Journal of Experimental and Theoretical Physics, 131(6), 940-944. https://doi.org/10.1134/S1063776120110084

Vancouver

Perevalov TV, Iskhakzai RMK, Aliev VS, Gritsenko VA, Prosvirin IP. Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma. Journal of Experimental and Theoretical Physics. 2020 Dec;131(6):940-944. doi: 10.1134/S1063776120110084

Author

Perevalov, T. V. ; Iskhakzai, R. M.Kh ; Aliev, V. Sh et al. / Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma. In: Journal of Experimental and Theoretical Physics. 2020 ; Vol. 131, No. 6. pp. 940-944.

BibTeX

@article{b6c2c6c1f046415194d5f92c9cc8f05b,
title = "Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma",
abstract = "The silicon oxide thin films obtained by thermal SiO2 treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of thermal SiO2, the more so the longer the treatment time. The atomic structure of the SiOx< 2 films obtained in this way is described by the random bonding model. The presence of oxygen vacancies in the plasma-treated films is confirmed by comparing the experimental valence band photoelectron spectra and those calculated from first principles, which allows the parameter x to be estimated. We show that thermal silicon oxide films treated in hydrogen plasma can be successfully used as a storage medium for a nonvolatile resistive memory cell.",
author = "Perevalov, {T. V.} and Iskhakzai, {R. M.Kh} and Aliev, {V. Sh} and Gritsenko, {V. A.} and Prosvirin, {I. P.}",
note = "Funding Information: This work was supported by the Russian Science Foundation (project no. 19-19-00286). The simulations were performed at the computational cluster of the Data Processing Center of the Novosibirsk State University. Publisher Copyright: {\textcopyright} 2020, Pleiades Publishing, Inc. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2020",
month = dec,
doi = "10.1134/S1063776120110084",
language = "English",
volume = "131",
pages = "940--944",
journal = "Journal of Experimental and Theoretical Physics",
issn = "1063-7761",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "6",

}

RIS

TY - JOUR

T1 - Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma

AU - Perevalov, T. V.

AU - Iskhakzai, R. M.Kh

AU - Aliev, V. Sh

AU - Gritsenko, V. A.

AU - Prosvirin, I. P.

N1 - Funding Information: This work was supported by the Russian Science Foundation (project no. 19-19-00286). The simulations were performed at the computational cluster of the Data Processing Center of the Novosibirsk State University. Publisher Copyright: © 2020, Pleiades Publishing, Inc. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2020/12

Y1 - 2020/12

N2 - The silicon oxide thin films obtained by thermal SiO2 treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of thermal SiO2, the more so the longer the treatment time. The atomic structure of the SiOx< 2 films obtained in this way is described by the random bonding model. The presence of oxygen vacancies in the plasma-treated films is confirmed by comparing the experimental valence band photoelectron spectra and those calculated from first principles, which allows the parameter x to be estimated. We show that thermal silicon oxide films treated in hydrogen plasma can be successfully used as a storage medium for a nonvolatile resistive memory cell.

AB - The silicon oxide thin films obtained by thermal SiO2 treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of thermal SiO2, the more so the longer the treatment time. The atomic structure of the SiOx< 2 films obtained in this way is described by the random bonding model. The presence of oxygen vacancies in the plasma-treated films is confirmed by comparing the experimental valence band photoelectron spectra and those calculated from first principles, which allows the parameter x to be estimated. We show that thermal silicon oxide films treated in hydrogen plasma can be successfully used as a storage medium for a nonvolatile resistive memory cell.

UR - http://www.scopus.com/inward/record.url?scp=85100572713&partnerID=8YFLogxK

U2 - 10.1134/S1063776120110084

DO - 10.1134/S1063776120110084

M3 - Article

AN - SCOPUS:85100572713

VL - 131

SP - 940

EP - 944

JO - Journal of Experimental and Theoretical Physics

JF - Journal of Experimental and Theoretical Physics

SN - 1063-7761

IS - 6

ER -

ID: 27777445