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Atomic and electronic structure of ferroelectric La-doped HfO2 films. / Perevalov, T. V.; Gutakovskii, A. K.; Kruchinin, V. N. et al.

In: Materials Research Express, Vol. 6, No. 3, 036403, 01.03.2019.

Research output: Contribution to journal › Article › peer-review

Harvard

Perevalov, TV, Gutakovskii, AK, Kruchinin, VN, Gritsenko, VA & Prosvirin, IP 2019, 'Atomic and electronic structure of ferroelectric La-doped HfO2 films', Materials Research Express, vol. 6, no. 3, 036403. https://doi.org/10.1088/2053-1591/aaf436

APA

Perevalov, T. V., Gutakovskii, A. K., Kruchinin, V. N., Gritsenko, V. A., & Prosvirin, I. P. (2019). Atomic and electronic structure of ferroelectric La-doped HfO2 films. Materials Research Express, 6(3), [036403]. https://doi.org/10.1088/2053-1591/aaf436

Vancouver

Perevalov TV, Gutakovskii AK, Kruchinin VN, Gritsenko VA, Prosvirin IP. Atomic and electronic structure of ferroelectric La-doped HfO2 films. Materials Research Express. 2019 Mar 1;6(3):036403. doi: 10.1088/2053-1591/aaf436

Author

Perevalov, T. V. ; Gutakovskii, A. K. ; Kruchinin, V. N. et al. / Atomic and electronic structure of ferroelectric La-doped HfO2 films. In: Materials Research Express. 2019 ; Vol. 6, No. 3.

BibTeX

@article{b94f79460bb24f98b96268320140cfe9,
title = "Atomic and electronic structure of ferroelectric La-doped HfO2 films",
abstract = "The atomic structure and optical properties of ferroelectric La-doped hafnium oxide (La:HfO2) thin films grown by the plasma-assisted atomic layer deposition were investigated. Using high resolution transmission electron microscopy, it was shown that the studied La:HfO2 film has a orthorhombic polar structure with the Pmn21 space group. It was found that the film exhibits ferroelectric properties. By means of x-ray photoelectron spectroscopy and specroellipsometry it was established that La:HfO2 consists of the HfO2 and La2O3 phases mixture. The specroellipsometry analysis with the Bruggeman effective medium approximation showed that the investigated La:HfO2 consists of 88% HfO2 and 12% La2O3. It is shown that etching La:HfO2 with argon ions leads to the oxygen vacancies generation in the near-surface region. These vacancies are generated mainly due to the knocking out of oxygen atoms to the interstitial positions, and the following annealing at 700 °C in vacuum for 1 h leads to the annihilation of that Frenkel defects.",
keywords = "DFT, FRAM, Hafnium oxide, HRTEM, oxygen vacancy, photoelectron spectra, specroellipsometry, THIN-FILMS, OXIDE, hafnium oxide, HAFNIA",
author = "Perevalov, {T. V.} and Gutakovskii, {A. K.} and Kruchinin, {V. N.} and Gritsenko, {V. A.} and Prosvirin, {I. P.}",
year = "2019",
month = mar,
day = "1",
doi = "10.1088/2053-1591/aaf436",
language = "English",
volume = "6",
journal = "Materials Research Express",
issn = "2053-1591",
publisher = "IOP Publishing Ltd.",
number = "3",

}

RIS

TY - JOUR

T1 - Atomic and electronic structure of ferroelectric La-doped HfO2 films

AU - Perevalov, T. V.

AU - Gutakovskii, A. K.

AU - Kruchinin, V. N.

AU - Gritsenko, V. A.

AU - Prosvirin, I. P.

PY - 2019/3/1

Y1 - 2019/3/1

N2 - The atomic structure and optical properties of ferroelectric La-doped hafnium oxide (La:HfO2) thin films grown by the plasma-assisted atomic layer deposition were investigated. Using high resolution transmission electron microscopy, it was shown that the studied La:HfO2 film has a orthorhombic polar structure with the Pmn21 space group. It was found that the film exhibits ferroelectric properties. By means of x-ray photoelectron spectroscopy and specroellipsometry it was established that La:HfO2 consists of the HfO2 and La2O3 phases mixture. The specroellipsometry analysis with the Bruggeman effective medium approximation showed that the investigated La:HfO2 consists of 88% HfO2 and 12% La2O3. It is shown that etching La:HfO2 with argon ions leads to the oxygen vacancies generation in the near-surface region. These vacancies are generated mainly due to the knocking out of oxygen atoms to the interstitial positions, and the following annealing at 700 °C in vacuum for 1 h leads to the annihilation of that Frenkel defects.

AB - The atomic structure and optical properties of ferroelectric La-doped hafnium oxide (La:HfO2) thin films grown by the plasma-assisted atomic layer deposition were investigated. Using high resolution transmission electron microscopy, it was shown that the studied La:HfO2 film has a orthorhombic polar structure with the Pmn21 space group. It was found that the film exhibits ferroelectric properties. By means of x-ray photoelectron spectroscopy and specroellipsometry it was established that La:HfO2 consists of the HfO2 and La2O3 phases mixture. The specroellipsometry analysis with the Bruggeman effective medium approximation showed that the investigated La:HfO2 consists of 88% HfO2 and 12% La2O3. It is shown that etching La:HfO2 with argon ions leads to the oxygen vacancies generation in the near-surface region. These vacancies are generated mainly due to the knocking out of oxygen atoms to the interstitial positions, and the following annealing at 700 °C in vacuum for 1 h leads to the annihilation of that Frenkel defects.

KW - DFT

KW - FRAM

KW - Hafnium oxide

KW - HRTEM

KW - oxygen vacancy

KW - photoelectron spectra

KW - specroellipsometry

KW - THIN-FILMS

KW - OXIDE

KW - hafnium oxide

KW - HAFNIA

UR - http://www.scopus.com/inward/record.url?scp=85059244428&partnerID=8YFLogxK

U2 - 10.1088/2053-1591/aaf436

DO - 10.1088/2053-1591/aaf436

M3 - Article

AN - SCOPUS:85059244428

VL - 6

JO - Materials Research Express

JF - Materials Research Express

SN - 2053-1591

IS - 3

M1 - 036403

ER -

ID: 18064191