Standard

Analytical solution of the problem of dissolved gas segregation in melt by the plain crystallization front. / Chernov, A. A.; Pil'nik, A. A.

In: Journal of Crystal Growth, Vol. 483, 01.02.2018, p. 291-296.

Research output: Contribution to journal › Article › peer-review

Harvard

Chernov, AA & Pil'nik, AA 2018, 'Analytical solution of the problem of dissolved gas segregation in melt by the plain crystallization front', Journal of Crystal Growth, vol. 483, pp. 291-296. https://doi.org/10.1016/j.jcrysgro.2017.12.019

APA

Chernov, A. A., & Pil'nik, A. A. (2018). Analytical solution of the problem of dissolved gas segregation in melt by the plain crystallization front. Journal of Crystal Growth, 483, 291-296. https://doi.org/10.1016/j.jcrysgro.2017.12.019

Vancouver

Chernov AA, Pil'nik AA. Analytical solution of the problem of dissolved gas segregation in melt by the plain crystallization front. Journal of Crystal Growth. 2018 Feb 1;483:291-296. doi: 10.1016/j.jcrysgro.2017.12.019

Author

Chernov, A. A. ; Pil'nik, A. A. / Analytical solution of the problem of dissolved gas segregation in melt by the plain crystallization front. In: Journal of Crystal Growth. 2018 ; Vol. 483. pp. 291-296.

BibTeX

@article{e50341cf53fa4ce7806c35bb7d6774d0,
title = "Analytical solution of the problem of dissolved gas segregation in melt by the plain crystallization front",
abstract = "Analytical solution of the segregation problem is found for the arbitrary crystal growth law using the quasi-steady-state approximation. The segregation in this case is caused by the displacement of dissolved gas by moving plane crystallization front. The effect of solidification shrinkage on the crystallization process was taken into account. The comparison made between obtained solution and existing exact solutions shows good agreement. It is shown that in the case of “equilibrium crystallization” (when the growth rate is inversely proportional to time) the solution of the problem becomes self-similar. In this case gas concentration at the crystallization front instantly increases to a certain value and than stays the same during the whole process. At the same time the diffusion layer thickness increases proportionally to time. The conditions for the inevitability of gaseous release leading to the formation of pores in solidified material is formulated for the general case.",
keywords = "Diffusion, Growth from melt, Mass transfer, Segregation, Single crystal growth, Solidification, POROSITY, ALLOY COATINGS, MECHANISM, LIQUID, GROWTH, SUPERCOOLED MELT, PORE SHAPE, MORPHOLOGY",
author = "Chernov, {A. A.} and Pil'nik, {A. A.}",
note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",
year = "2018",
month = feb,
day = "1",
doi = "10.1016/j.jcrysgro.2017.12.019",
language = "English",
volume = "483",
pages = "291--296",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Analytical solution of the problem of dissolved gas segregation in melt by the plain crystallization front

AU - Chernov, A. A.

AU - Pil'nik, A. A.

N1 - Publisher Copyright: © 2017 Elsevier B.V.

PY - 2018/2/1

Y1 - 2018/2/1

N2 - Analytical solution of the segregation problem is found for the arbitrary crystal growth law using the quasi-steady-state approximation. The segregation in this case is caused by the displacement of dissolved gas by moving plane crystallization front. The effect of solidification shrinkage on the crystallization process was taken into account. The comparison made between obtained solution and existing exact solutions shows good agreement. It is shown that in the case of “equilibrium crystallization” (when the growth rate is inversely proportional to time) the solution of the problem becomes self-similar. In this case gas concentration at the crystallization front instantly increases to a certain value and than stays the same during the whole process. At the same time the diffusion layer thickness increases proportionally to time. The conditions for the inevitability of gaseous release leading to the formation of pores in solidified material is formulated for the general case.

AB - Analytical solution of the segregation problem is found for the arbitrary crystal growth law using the quasi-steady-state approximation. The segregation in this case is caused by the displacement of dissolved gas by moving plane crystallization front. The effect of solidification shrinkage on the crystallization process was taken into account. The comparison made between obtained solution and existing exact solutions shows good agreement. It is shown that in the case of “equilibrium crystallization” (when the growth rate is inversely proportional to time) the solution of the problem becomes self-similar. In this case gas concentration at the crystallization front instantly increases to a certain value and than stays the same during the whole process. At the same time the diffusion layer thickness increases proportionally to time. The conditions for the inevitability of gaseous release leading to the formation of pores in solidified material is formulated for the general case.

KW - Diffusion

KW - Growth from melt

KW - Mass transfer

KW - Segregation

KW - Single crystal growth

KW - Solidification

KW - POROSITY

KW - ALLOY COATINGS

KW - MECHANISM

KW - LIQUID

KW - GROWTH

KW - SUPERCOOLED MELT

KW - PORE SHAPE

KW - MORPHOLOGY

UR - http://www.scopus.com/inward/record.url?scp=85038215815&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2017.12.019

DO - 10.1016/j.jcrysgro.2017.12.019

M3 - Article

AN - SCOPUS:85038215815

VL - 483

SP - 291

EP - 296

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -

ID: 9160587