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Analytical solution of the problem of dissolved gas segregation in melt by the plain crystallization front. / Chernov, A. A.; Pil'nik, A. A.
в: Journal of Crystal Growth, Том 483, 01.02.2018, стр. 291-296.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Analytical solution of the problem of dissolved gas segregation in melt by the plain crystallization front
AU - Chernov, A. A.
AU - Pil'nik, A. A.
N1 - Publisher Copyright: © 2017 Elsevier B.V.
PY - 2018/2/1
Y1 - 2018/2/1
N2 - Analytical solution of the segregation problem is found for the arbitrary crystal growth law using the quasi-steady-state approximation. The segregation in this case is caused by the displacement of dissolved gas by moving plane crystallization front. The effect of solidification shrinkage on the crystallization process was taken into account. The comparison made between obtained solution and existing exact solutions shows good agreement. It is shown that in the case of “equilibrium crystallization” (when the growth rate is inversely proportional to time) the solution of the problem becomes self-similar. In this case gas concentration at the crystallization front instantly increases to a certain value and than stays the same during the whole process. At the same time the diffusion layer thickness increases proportionally to time. The conditions for the inevitability of gaseous release leading to the formation of pores in solidified material is formulated for the general case.
AB - Analytical solution of the segregation problem is found for the arbitrary crystal growth law using the quasi-steady-state approximation. The segregation in this case is caused by the displacement of dissolved gas by moving plane crystallization front. The effect of solidification shrinkage on the crystallization process was taken into account. The comparison made between obtained solution and existing exact solutions shows good agreement. It is shown that in the case of “equilibrium crystallization” (when the growth rate is inversely proportional to time) the solution of the problem becomes self-similar. In this case gas concentration at the crystallization front instantly increases to a certain value and than stays the same during the whole process. At the same time the diffusion layer thickness increases proportionally to time. The conditions for the inevitability of gaseous release leading to the formation of pores in solidified material is formulated for the general case.
KW - Diffusion
KW - Growth from melt
KW - Mass transfer
KW - Segregation
KW - Single crystal growth
KW - Solidification
KW - POROSITY
KW - ALLOY COATINGS
KW - MECHANISM
KW - LIQUID
KW - GROWTH
KW - SUPERCOOLED MELT
KW - PORE SHAPE
KW - MORPHOLOGY
UR - http://www.scopus.com/inward/record.url?scp=85038215815&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2017.12.019
DO - 10.1016/j.jcrysgro.2017.12.019
M3 - Article
AN - SCOPUS:85038215815
VL - 483
SP - 291
EP - 296
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -
ID: 9160587