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Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE. / Milakhin, D. S.; Malin, T. V.; Mansurov, V. G. et al.

In: Journal of Physics: Conference Series, Vol. 1851, No. 1, 012005, 15.04.2021.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Milakhin, DS, Malin, TV, Mansurov, VG, Galitsyn, YG & Zhuravlev, KS 2021, 'Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE', Journal of Physics: Conference Series, vol. 1851, no. 1, 012005. https://doi.org/10.1088/1742-6596/1851/1/012005

APA

Milakhin, D. S., Malin, T. V., Mansurov, V. G., Galitsyn, Y. G., & Zhuravlev, K. S. (2021). Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE. Journal of Physics: Conference Series, 1851(1), [012005]. https://doi.org/10.1088/1742-6596/1851/1/012005

Vancouver

Milakhin DS, Malin TV, Mansurov VG, Galitsyn YG, Zhuravlev KS. Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE. Journal of Physics: Conference Series. 2021 Apr 15;1851(1):012005. doi: 10.1088/1742-6596/1851/1/012005

Author

Milakhin, D. S. ; Malin, T. V. ; Mansurov, V. G. et al. / Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE. In: Journal of Physics: Conference Series. 2021 ; Vol. 1851, No. 1.

BibTeX

@article{02b553af26954df98cabeb32bdb614d1,
title = "Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE",
abstract = "The AlN phase transition on the (0001) Al2O3 surface was investigated. It was experimentally estimated that the AlN formation rate as a function of temperature has a different character in two temperature regions. In the region of relatively low temperatures (T < 1210 K), the AlN formation rate is limited by chemical reactions. At higher temperatures (T > 1210 K), the formation of an ordered AlN phase is determined by a continuous two-dimensional phase transition within the filled AlN-lattice-gas cells formed on the sapphire surface. A three-parameter isotherm is proposed to describe the process. The observed phase transition in the AlN lattice gas is a continuous phase transition or a second-order transition. ",
author = "Milakhin, {D. S.} and Malin, {T. V.} and Mansurov, {V. G.} and Galitsyn, {Yu G.} and Zhuravlev, {K. S.}",
note = "Funding Information: The research was financially supported by RFBR (Project No. 21-52-46001). Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.; 22nd Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2020 ; Conference date: 23-11-2020 Through 27-11-2020",
year = "2021",
month = apr,
day = "15",
doi = "10.1088/1742-6596/1851/1/012005",
language = "English",
volume = "1851",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE

AU - Milakhin, D. S.

AU - Malin, T. V.

AU - Mansurov, V. G.

AU - Galitsyn, Yu G.

AU - Zhuravlev, K. S.

N1 - Funding Information: The research was financially supported by RFBR (Project No. 21-52-46001). Publisher Copyright: © Published under licence by IOP Publishing Ltd. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/4/15

Y1 - 2021/4/15

N2 - The AlN phase transition on the (0001) Al2O3 surface was investigated. It was experimentally estimated that the AlN formation rate as a function of temperature has a different character in two temperature regions. In the region of relatively low temperatures (T < 1210 K), the AlN formation rate is limited by chemical reactions. At higher temperatures (T > 1210 K), the formation of an ordered AlN phase is determined by a continuous two-dimensional phase transition within the filled AlN-lattice-gas cells formed on the sapphire surface. A three-parameter isotherm is proposed to describe the process. The observed phase transition in the AlN lattice gas is a continuous phase transition or a second-order transition.

AB - The AlN phase transition on the (0001) Al2O3 surface was investigated. It was experimentally estimated that the AlN formation rate as a function of temperature has a different character in two temperature regions. In the region of relatively low temperatures (T < 1210 K), the AlN formation rate is limited by chemical reactions. At higher temperatures (T > 1210 K), the formation of an ordered AlN phase is determined by a continuous two-dimensional phase transition within the filled AlN-lattice-gas cells formed on the sapphire surface. A three-parameter isotherm is proposed to describe the process. The observed phase transition in the AlN lattice gas is a continuous phase transition or a second-order transition.

UR - http://www.scopus.com/inward/record.url?scp=85104674570&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1851/1/012005

DO - 10.1088/1742-6596/1851/1/012005

M3 - Conference article

AN - SCOPUS:85104674570

VL - 1851

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012005

T2 - 22nd Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2020

Y2 - 23 November 2020 through 27 November 2020

ER -

ID: 28503590