Результаты исследований: Научные публикации в периодических изданиях › статья по материалам конференции › Рецензирование
Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE. / Milakhin, D. S.; Malin, T. V.; Mansurov, V. G. и др.
в: Journal of Physics: Conference Series, Том 1851, № 1, 012005, 15.04.2021.Результаты исследований: Научные публикации в периодических изданиях › статья по материалам конференции › Рецензирование
}
TY - JOUR
T1 - Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE
AU - Milakhin, D. S.
AU - Malin, T. V.
AU - Mansurov, V. G.
AU - Galitsyn, Yu G.
AU - Zhuravlev, K. S.
N1 - Funding Information: The research was financially supported by RFBR (Project No. 21-52-46001). Publisher Copyright: © Published under licence by IOP Publishing Ltd. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021/4/15
Y1 - 2021/4/15
N2 - The AlN phase transition on the (0001) Al2O3 surface was investigated. It was experimentally estimated that the AlN formation rate as a function of temperature has a different character in two temperature regions. In the region of relatively low temperatures (T < 1210 K), the AlN formation rate is limited by chemical reactions. At higher temperatures (T > 1210 K), the formation of an ordered AlN phase is determined by a continuous two-dimensional phase transition within the filled AlN-lattice-gas cells formed on the sapphire surface. A three-parameter isotherm is proposed to describe the process. The observed phase transition in the AlN lattice gas is a continuous phase transition or a second-order transition.
AB - The AlN phase transition on the (0001) Al2O3 surface was investigated. It was experimentally estimated that the AlN formation rate as a function of temperature has a different character in two temperature regions. In the region of relatively low temperatures (T < 1210 K), the AlN formation rate is limited by chemical reactions. At higher temperatures (T > 1210 K), the formation of an ordered AlN phase is determined by a continuous two-dimensional phase transition within the filled AlN-lattice-gas cells formed on the sapphire surface. A three-parameter isotherm is proposed to describe the process. The observed phase transition in the AlN lattice gas is a continuous phase transition or a second-order transition.
UR - http://www.scopus.com/inward/record.url?scp=85104674570&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/1851/1/012005
DO - 10.1088/1742-6596/1851/1/012005
M3 - Conference article
AN - SCOPUS:85104674570
VL - 1851
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012005
T2 - 22nd Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2020
Y2 - 23 November 2020 through 27 November 2020
ER -
ID: 28503590