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Amplified luminescence of heavily doped AlxGa1-xN structures under optical pumping. / Bokhan, P. A.; Zhuravlev, K. S.; Zakrevskii, D. E. et al.

In: Quantum Electronics, Vol. 48, No. 3, 01.01.2018, p. 215-221.

Research output: Contribution to journal › Article › peer-review

Harvard

Bokhan, PA, Zhuravlev, KS, Zakrevskii, DE, Malin, TV, Osinnykh, IV & Fateev, NV 2018, 'Amplified luminescence of heavily doped AlxGa1-xN structures under optical pumping', Quantum Electronics, vol. 48, no. 3, pp. 215-221. https://doi.org/10.1070/QEL16529

APA

Bokhan, P. A., Zhuravlev, K. S., Zakrevskii, D. E., Malin, T. V., Osinnykh, I. V., & Fateev, N. V. (2018). Amplified luminescence of heavily doped AlxGa1-xN structures under optical pumping. Quantum Electronics, 48(3), 215-221. https://doi.org/10.1070/QEL16529

Vancouver

Bokhan PA, Zhuravlev KS, Zakrevskii DE, Malin TV, Osinnykh IV, Fateev NV. Amplified luminescence of heavily doped AlxGa1-xN structures under optical pumping. Quantum Electronics. 2018 Jan 1;48(3):215-221. doi: 10.1070/QEL16529

Author

Bokhan, P. A. ; Zhuravlev, K. S. ; Zakrevskii, D. E. et al. / Amplified luminescence of heavily doped AlxGa1-xN structures under optical pumping. In: Quantum Electronics. 2018 ; Vol. 48, No. 3. pp. 215-221.

BibTeX

@article{00ec6d2c6ecb4006bbfd8ee40b3ab68e,
title = "Amplified luminescence of heavily doped AlxGa1-xN structures under optical pumping",
abstract = "Spectral, temporal, and polarisation characteristics of luminescence of heavily doped AlxGa1-xN films on a sapphire substrate are studied under pulsed pumping at the wavelength λ = 266 m. Spectra of spontaneous emission related to donor-acceptor transitions are inhomogeneously broadened with the FWHM of above 0.5 eV and cover the entire visible range. Spectra of radiation emitted from an edge of investigated structure comprise several narrow-band equidistant components, each of them being split to TE and TM modes with mutually orthogonal polarisations. This is related to plane waves propagating inside a plane waveguide along a zigzag path in the conditions of total internal reflection from waveguide surfaces. The optical gains measured for Al0.5Ga0.5N/AlN at λ ≈ 510 nm, Al0.74Ga0.26N/AlN at λ ≈ 468 nm, and AlN/Al0.6Ga0.4N/AlN/Al2O3 at λ ≈ 480 nm were, respectively, ∼70, 20, and 44 cm-1. The luminescence quantum efficiencies measured for Al0.74Ga0.26N, Al0.65Ga0.35N, and Al0.5Ga0.5N films are, respectively, 0.79, 0.49, and 0.14; the transition cross sections calculated at emission band centres are ∼10-18 cm2.",
keywords = "Gain, Luminescence, Optical pumping, Spontaneous emission, luminescence, GAN, optical pumping, LENGTH, spontaneous emission, BAND SUPERLUMINESCENT DIODES, gain",
author = "Bokhan, {P. A.} and Zhuravlev, {K. S.} and Zakrevskii, {D. E.} and Malin, {T. V.} and Osinnykh, {I. V.} and Fateev, {N. V.}",
year = "2018",
month = jan,
day = "1",
doi = "10.1070/QEL16529",
language = "English",
volume = "48",
pages = "215--221",
journal = "Quantum Electronics",
issn = "1063-7818",
publisher = "Turpion Ltd.",
number = "3",

}

RIS

TY - JOUR

T1 - Amplified luminescence of heavily doped AlxGa1-xN structures under optical pumping

AU - Bokhan, P. A.

AU - Zhuravlev, K. S.

AU - Zakrevskii, D. E.

AU - Malin, T. V.

AU - Osinnykh, I. V.

AU - Fateev, N. V.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Spectral, temporal, and polarisation characteristics of luminescence of heavily doped AlxGa1-xN films on a sapphire substrate are studied under pulsed pumping at the wavelength λ = 266 m. Spectra of spontaneous emission related to donor-acceptor transitions are inhomogeneously broadened with the FWHM of above 0.5 eV and cover the entire visible range. Spectra of radiation emitted from an edge of investigated structure comprise several narrow-band equidistant components, each of them being split to TE and TM modes with mutually orthogonal polarisations. This is related to plane waves propagating inside a plane waveguide along a zigzag path in the conditions of total internal reflection from waveguide surfaces. The optical gains measured for Al0.5Ga0.5N/AlN at λ ≈ 510 nm, Al0.74Ga0.26N/AlN at λ ≈ 468 nm, and AlN/Al0.6Ga0.4N/AlN/Al2O3 at λ ≈ 480 nm were, respectively, ∼70, 20, and 44 cm-1. The luminescence quantum efficiencies measured for Al0.74Ga0.26N, Al0.65Ga0.35N, and Al0.5Ga0.5N films are, respectively, 0.79, 0.49, and 0.14; the transition cross sections calculated at emission band centres are ∼10-18 cm2.

AB - Spectral, temporal, and polarisation characteristics of luminescence of heavily doped AlxGa1-xN films on a sapphire substrate are studied under pulsed pumping at the wavelength λ = 266 m. Spectra of spontaneous emission related to donor-acceptor transitions are inhomogeneously broadened with the FWHM of above 0.5 eV and cover the entire visible range. Spectra of radiation emitted from an edge of investigated structure comprise several narrow-band equidistant components, each of them being split to TE and TM modes with mutually orthogonal polarisations. This is related to plane waves propagating inside a plane waveguide along a zigzag path in the conditions of total internal reflection from waveguide surfaces. The optical gains measured for Al0.5Ga0.5N/AlN at λ ≈ 510 nm, Al0.74Ga0.26N/AlN at λ ≈ 468 nm, and AlN/Al0.6Ga0.4N/AlN/Al2O3 at λ ≈ 480 nm were, respectively, ∼70, 20, and 44 cm-1. The luminescence quantum efficiencies measured for Al0.74Ga0.26N, Al0.65Ga0.35N, and Al0.5Ga0.5N films are, respectively, 0.79, 0.49, and 0.14; the transition cross sections calculated at emission band centres are ∼10-18 cm2.

KW - Gain

KW - Luminescence

KW - Optical pumping

KW - Spontaneous emission

KW - luminescence

KW - GAN

KW - optical pumping

KW - LENGTH

KW - spontaneous emission

KW - BAND SUPERLUMINESCENT DIODES

KW - gain

UR - http://www.scopus.com/inward/record.url?scp=85047725276&partnerID=8YFLogxK

U2 - 10.1070/QEL16529

DO - 10.1070/QEL16529

M3 - Article

AN - SCOPUS:85047725276

VL - 48

SP - 215

EP - 221

JO - Quantum Electronics

JF - Quantum Electronics

SN - 1063-7818

IS - 3

ER -

ID: 13668336