Aluminum-induced crystallization of silicon suboxide thin films

Standard

Aluminum-induced crystallization of silicon suboxide thin films. / Zamchiy, A. O.; Baranov, E. A.; Khmel, S. Ya et al.

In: Applied Physics A: Materials Science and Processing, Vol. 124, No. 9, 646, 01.09.2018.

Research output: Contribution to journal › Article › peer-review

Harvard

Zamchiy, AO, Baranov, EA, Khmel, SY, Volodin, VA, Vdovin, VI & Gutakovskii, AK 2018, 'Aluminum-induced crystallization of silicon suboxide thin films', Applied Physics A: Materials Science and Processing, vol. 124, no. 9, 646. https://doi.org/10.1007/s00339-018-2070-y

APA

Zamchiy, A. O., Baranov, E. A., Khmel, S. Y., Volodin, V. A., Vdovin, V. I., & Gutakovskii, A. K. (2018). Aluminum-induced crystallization of silicon suboxide thin films. Applied Physics A: Materials Science and Processing, 124(9), [646]. https://doi.org/10.1007/s00339-018-2070-y

Vancouver

Zamchiy AO, Baranov EA, Khmel SY, Volodin VA, Vdovin VI, Gutakovskii AK. Aluminum-induced crystallization of silicon suboxide thin films. Applied Physics A: Materials Science and Processing. 2018 Sept 1;124(9):646. doi: 10.1007/s00339-018-2070-y

Author

Zamchiy, A. O. ; Baranov, E. A. ; Khmel, S. Ya et al. / Aluminum-induced crystallization of silicon suboxide thin films. In: Applied Physics A: Materials Science and Processing. 2018 ; Vol. 124, No. 9.

BibTeX

@article{6b634a91f8e342fa827c12c90fc966c2,

title = "Aluminum-induced crystallization of silicon suboxide thin films",

abstract = "Polycrystalline silicon (poly-Si) thin films are fabricated by aluminum-induced crystallization (AIC) of amorphous silicon suboxide (a-SiOx, x = 0.22) at 550 °C for 20 h. AIC of a-SiO0.22 via thermal annealing of a-SiO0.22/Al bilayer structures leads to layer exchange with the formation of poly-Si films with (111) preferential orientation and high-crystalline quality-coated with a layer of a mixture of Al, Si, and O atoms with inclusions of silicon nanocrystallites. The initial a-SiO0.22/Al thickness ratio approximately equal to 1 provides the formation of a discontinuous poly-Si film with a crystallized fraction of 85%, as shown by optical microscopy.",

keywords = "AL-INDUCED CRYSTALLIZATION, VAPOR-DEPOSITION METHOD, INDUCED LAYER EXCHANGE, POLYCRYSTALLINE SILICON, SI FILMS, ORIENTATION, MORPHOLOGY, GLASS",

author = "Zamchiy, {A. O.} and Baranov, {E. A.} and Khmel, {S. Ya} and Volodin, {V. A.} and Vdovin, {V. I.} and Gutakovskii, {A. K.}",

note = "Publisher Copyright: {\textcopyright} 2018, Springer-Verlag GmbH Germany, part of Springer Nature.",

year = "2018",

month = sep,

day = "1",

doi = "10.1007/s00339-018-2070-y",

language = "English",

volume = "124",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Nature",

number = "9",

}

RIS

TY - JOUR

T1 - Aluminum-induced crystallization of silicon suboxide thin films

AU - Zamchiy, A. O.

AU - Baranov, E. A.

AU - Khmel, S. Ya

AU - Volodin, V. A.

AU - Vdovin, V. I.

AU - Gutakovskii, A. K.

PY - 2018/9/1

Y1 - 2018/9/1

N2 - Polycrystalline silicon (poly-Si) thin films are fabricated by aluminum-induced crystallization (AIC) of amorphous silicon suboxide (a-SiOx, x = 0.22) at 550 °C for 20 h. AIC of a-SiO0.22 via thermal annealing of a-SiO0.22/Al bilayer structures leads to layer exchange with the formation of poly-Si films with (111) preferential orientation and high-crystalline quality-coated with a layer of a mixture of Al, Si, and O atoms with inclusions of silicon nanocrystallites. The initial a-SiO0.22/Al thickness ratio approximately equal to 1 provides the formation of a discontinuous poly-Si film with a crystallized fraction of 85%, as shown by optical microscopy.

AB - Polycrystalline silicon (poly-Si) thin films are fabricated by aluminum-induced crystallization (AIC) of amorphous silicon suboxide (a-SiOx, x = 0.22) at 550 °C for 20 h. AIC of a-SiO0.22 via thermal annealing of a-SiO0.22/Al bilayer structures leads to layer exchange with the formation of poly-Si films with (111) preferential orientation and high-crystalline quality-coated with a layer of a mixture of Al, Si, and O atoms with inclusions of silicon nanocrystallites. The initial a-SiO0.22/Al thickness ratio approximately equal to 1 provides the formation of a discontinuous poly-Si film with a crystallized fraction of 85%, as shown by optical microscopy.

KW - AL-INDUCED CRYSTALLIZATION

KW - VAPOR-DEPOSITION METHOD

KW - INDUCED LAYER EXCHANGE

KW - POLYCRYSTALLINE SILICON

KW - SI FILMS

KW - ORIENTATION

KW - MORPHOLOGY

KW - GLASS

UR - http://www.scopus.com/inward/record.url?scp=85052392318&partnerID=8YFLogxK

U2 - 10.1007/s00339-018-2070-y

DO - 10.1007/s00339-018-2070-y

M3 - Article

AN - SCOPUS:85052392318

VL - 124

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

SN - 0947-8396

IS - 9

M1 - 646

ER -

ID: 16232895