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Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential

Research output: Contribution to journal › Article › peer-review

Quantum Phenomena in Condensed Systems Laboratory

DOI

https://doi.org/10.1134/S106378261712003X
Final published version

L. S. Bovkun
A. V. Ikonnikov
V. Ya Aleshkin
S. S. Krishtopenko
A. V. Antonov
K. E. Spirin
N. N. Mikhailov
S. A. Dvoretsky
V. I. Gavrilenko

Original language	English
Pages (from-to)	1562-1570
Number of pages	9
Journal	Semiconductors
Volume	51
Issue number	12
DOIs	https://doi.org/10.1134/S106378261712003X
Publication status	Published - 1 Dec 2017

Research areas

DE-HAAS OSCILLATIONS, DENSITY-OF-STATES, ELECTRON G-FACTOR, EXCHANGE ENHANCEMENT, TRANSPORT, GAS, HETEROSTRUCTURES, SCATTERING, SYSTEM

OECD FOS+WOS

ID: 9645627