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Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors : Role of the random potential. / Bovkun, L. S.; Ikonnikov, A. V.; Aleshkin, V. Ya et al.

In: Semiconductors, Vol. 51, No. 12, 01.12.2017, p. 1562-1570.

Research output: Contribution to journal › Article › peer-review

Harvard

Bovkun, LS, Ikonnikov, AV, Aleshkin, VY, Krishtopenko, SS, Antonov, AV, Spirin, KE, Mikhailov, NN, Dvoretsky, SA & Gavrilenko, VI 2017, 'Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential', Semiconductors, vol. 51, no. 12, pp. 1562-1570. https://doi.org/10.1134/S106378261712003X

APA

Bovkun, L. S., Ikonnikov, A. V., Aleshkin, V. Y., Krishtopenko, S. S., Antonov, A. V., Spirin, K. E., Mikhailov, N. N., Dvoretsky, S. A., & Gavrilenko, V. I. (2017). Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential. Semiconductors, 51(12), 1562-1570. https://doi.org/10.1134/S106378261712003X

Vancouver

Bovkun LS, Ikonnikov AV, Aleshkin VY, Krishtopenko SS, Antonov AV, Spirin KE et al. Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential. Semiconductors. 2017 Dec 1;51(12):1562-1570. doi: 10.1134/S106378261712003X

Author

Bovkun, L. S. ; Ikonnikov, A. V. ; Aleshkin, V. Ya et al. / Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors : Role of the random potential. In: Semiconductors. 2017 ; Vol. 51, No. 12. pp. 1562-1570.

BibTeX

@article{504137f634bf41a7af874f604e881dbd,
title = "Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential",
abstract = "Shubnikov-de Haas oscillations are studied in 8-nm-wide HgTe/CdHgTe quantum wells with an electron concentration of (1.7–13) × 1011 cm–2 in the temperature range from 1.6 to 40 K. The gaps between Landau levels and the quantum relaxation time are determined from the temperature dependence of the oscillation amplitude at integer filling factors. The experimental gap values are found to be in good agreement with the results of the single-particle calculation of the level energies using the 8-band Kane model. The experimental widths of the density of states are indicative of profound screening of the exchange interaction in HgTe/CdHgTe quantum wells.",
keywords = "DE-HAAS OSCILLATIONS, DENSITY-OF-STATES, ELECTRON G-FACTOR, EXCHANGE ENHANCEMENT, TRANSPORT, GAS, HETEROSTRUCTURES, SCATTERING, SYSTEM",
author = "Bovkun, {L. S.} and Ikonnikov, {A. V.} and Aleshkin, {V. Ya} and Krishtopenko, {S. S.} and Antonov, {A. V.} and Spirin, {K. E.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.} and Gavrilenko, {V. I.}",
year = "2017",
month = dec,
day = "1",
doi = "10.1134/S106378261712003X",
language = "English",
volume = "51",
pages = "1562--1570",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "12",

}

RIS

TY - JOUR

T1 - Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors

T2 - Role of the random potential

AU - Bovkun, L. S.

AU - Ikonnikov, A. V.

AU - Aleshkin, V. Ya

AU - Krishtopenko, S. S.

AU - Antonov, A. V.

AU - Spirin, K. E.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

AU - Gavrilenko, V. I.

PY - 2017/12/1

Y1 - 2017/12/1

N2 - Shubnikov-de Haas oscillations are studied in 8-nm-wide HgTe/CdHgTe quantum wells with an electron concentration of (1.7–13) × 1011 cm–2 in the temperature range from 1.6 to 40 K. The gaps between Landau levels and the quantum relaxation time are determined from the temperature dependence of the oscillation amplitude at integer filling factors. The experimental gap values are found to be in good agreement with the results of the single-particle calculation of the level energies using the 8-band Kane model. The experimental widths of the density of states are indicative of profound screening of the exchange interaction in HgTe/CdHgTe quantum wells.

AB - Shubnikov-de Haas oscillations are studied in 8-nm-wide HgTe/CdHgTe quantum wells with an electron concentration of (1.7–13) × 1011 cm–2 in the temperature range from 1.6 to 40 K. The gaps between Landau levels and the quantum relaxation time are determined from the temperature dependence of the oscillation amplitude at integer filling factors. The experimental gap values are found to be in good agreement with the results of the single-particle calculation of the level energies using the 8-band Kane model. The experimental widths of the density of states are indicative of profound screening of the exchange interaction in HgTe/CdHgTe quantum wells.

KW - DE-HAAS OSCILLATIONS

KW - DENSITY-OF-STATES

KW - ELECTRON G-FACTOR

KW - EXCHANGE ENHANCEMENT

KW - TRANSPORT

KW - GAS

KW - HETEROSTRUCTURES

KW - SCATTERING

KW - SYSTEM

UR - http://www.scopus.com/inward/record.url?scp=85037618843&partnerID=8YFLogxK

U2 - 10.1134/S106378261712003X

DO - 10.1134/S106378261712003X

M3 - Article

AN - SCOPUS:85037618843

VL - 51

SP - 1562

EP - 1570

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 12

ER -

ID: 9645627