2D island nucleation controlled by nanocluster diffusion during Si and Ge epitaxy on Si(1 1 1)-(7 × 7) surface at elevated temperatures

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2D island nucleation controlled by nanocluster diffusion during Si and Ge epitaxy on Si(1 1 1)-(7 × 7) surface at elevated temperatures. / Petrov, A. S.; Rogilo, D. I.; Sheglov, D. V. et al.

In: Journal of Crystal Growth, Vol. 531, 125347, 01.02.2020.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{02ce4d145af440499ca0feeb304c4375,

title = "2D island nucleation controlled by nanocluster diffusion during Si and Ge epitaxy on Si(1 1 1)-(7 × 7) surface at elevated temperatures",

abstract = "We have studied two-dimensional (2D) island nucleation at the initial stages of Si and Ge epitaxial growth near monatomic steps and on wide (up to 10 μm) terraces on the Si(1 1 1)-(7 × 7) surface in 500–750 °C interval by in situ ultrahigh vacuum reflection electron microscopy (UHV REM) and ex situ atomic force microscopy (AFM). Concentration of 2D islands nucleated on the terraces and depletion zone width near the steps have been measured as functions of deposition rate and substrate temperature. We have shown that Ge[sbnd]Si and Si nanoclusters are dominating diffusion species providing surface mass transport on the Si(1 1 1)-(7 × 7) surface during Ge and Si epitaxial growth at temperatures above 500 °C and 600 °C, respectively; the activation energy of Ge[sbnd]Si nanocluster diffusion has been first estimated at 1.3–1.4 eV. The kinetics of 2D island nucleation and growth near the steps (both for Si and Ge epitaxy) and on the wide terraces (for Ge epitaxy) is limited by surface diffusion only, and critical nucleus consists of i ≫ 1 nanoclusters.",

keywords = "A1. Nucleation, A1. Surface processes, A3. Molecular beam epitaxy, B2. Semiconducting germanium, B2. Semiconducting silicon, Nucleation, MAGIC ISLANDS, SILICON, TRANSITION, CLUSTERS, GROWTH, Molecular beam epitaxy, ATOMS, Semiconducting silicon, SCANNING-TUNNELING-MICROSCOPY, Surface processes, Semiconducting germanium, TRANSFORMATIONS, INITIAL-STAGES, STEPS",

author = "Petrov, {A. S.} and Rogilo, {D. I.} and Sheglov, {D. V.} and Latyshev, {A. V.}",

year = "2020",

month = feb,

day = "1",

doi = "10.1016/j.jcrysgro.2019.125347",

language = "English",

volume = "531",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - 2D island nucleation controlled by nanocluster diffusion during Si and Ge epitaxy on Si(1 1 1)-(7 × 7) surface at elevated temperatures

AU - Petrov, A. S.

AU - Rogilo, D. I.

AU - Sheglov, D. V.

AU - Latyshev, A. V.

PY - 2020/2/1

Y1 - 2020/2/1

N2 - We have studied two-dimensional (2D) island nucleation at the initial stages of Si and Ge epitaxial growth near monatomic steps and on wide (up to 10 μm) terraces on the Si(1 1 1)-(7 × 7) surface in 500–750 °C interval by in situ ultrahigh vacuum reflection electron microscopy (UHV REM) and ex situ atomic force microscopy (AFM). Concentration of 2D islands nucleated on the terraces and depletion zone width near the steps have been measured as functions of deposition rate and substrate temperature. We have shown that Ge[sbnd]Si and Si nanoclusters are dominating diffusion species providing surface mass transport on the Si(1 1 1)-(7 × 7) surface during Ge and Si epitaxial growth at temperatures above 500 °C and 600 °C, respectively; the activation energy of Ge[sbnd]Si nanocluster diffusion has been first estimated at 1.3–1.4 eV. The kinetics of 2D island nucleation and growth near the steps (both for Si and Ge epitaxy) and on the wide terraces (for Ge epitaxy) is limited by surface diffusion only, and critical nucleus consists of i ≫ 1 nanoclusters.

AB - We have studied two-dimensional (2D) island nucleation at the initial stages of Si and Ge epitaxial growth near monatomic steps and on wide (up to 10 μm) terraces on the Si(1 1 1)-(7 × 7) surface in 500–750 °C interval by in situ ultrahigh vacuum reflection electron microscopy (UHV REM) and ex situ atomic force microscopy (AFM). Concentration of 2D islands nucleated on the terraces and depletion zone width near the steps have been measured as functions of deposition rate and substrate temperature. We have shown that Ge[sbnd]Si and Si nanoclusters are dominating diffusion species providing surface mass transport on the Si(1 1 1)-(7 × 7) surface during Ge and Si epitaxial growth at temperatures above 500 °C and 600 °C, respectively; the activation energy of Ge[sbnd]Si nanocluster diffusion has been first estimated at 1.3–1.4 eV. The kinetics of 2D island nucleation and growth near the steps (both for Si and Ge epitaxy) and on the wide terraces (for Ge epitaxy) is limited by surface diffusion only, and critical nucleus consists of i ≫ 1 nanoclusters.

KW - A1. Nucleation

KW - A1. Surface processes

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting germanium

KW - B2. Semiconducting silicon

KW - Nucleation

KW - MAGIC ISLANDS

KW - SILICON

KW - TRANSITION

KW - CLUSTERS

KW - GROWTH

KW - Molecular beam epitaxy

KW - ATOMS

KW - Semiconducting silicon

KW - SCANNING-TUNNELING-MICROSCOPY

KW - Surface processes

KW - Semiconducting germanium

KW - TRANSFORMATIONS

KW - INITIAL-STAGES

KW - STEPS

UR - http://www.scopus.com/inward/record.url?scp=85074882438&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2019.125347

DO - 10.1016/j.jcrysgro.2019.125347

M3 - Article

AN - SCOPUS:85074882438

VL - 531

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

M1 - 125347

ER -

ID: 23057007