Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
2D island nucleation controlled by nanocluster diffusion during Si and Ge epitaxy on Si(1 1 1)-(7 × 7) surface at elevated temperatures. / Petrov, A. S.; Rogilo, D. I.; Sheglov, D. V. и др.
в: Journal of Crystal Growth, Том 531, 125347, 01.02.2020.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - 2D island nucleation controlled by nanocluster diffusion during Si and Ge epitaxy on Si(1 1 1)-(7 × 7) surface at elevated temperatures
AU - Petrov, A. S.
AU - Rogilo, D. I.
AU - Sheglov, D. V.
AU - Latyshev, A. V.
PY - 2020/2/1
Y1 - 2020/2/1
N2 - We have studied two-dimensional (2D) island nucleation at the initial stages of Si and Ge epitaxial growth near monatomic steps and on wide (up to 10 μm) terraces on the Si(1 1 1)-(7 × 7) surface in 500–750 °C interval by in situ ultrahigh vacuum reflection electron microscopy (UHV REM) and ex situ atomic force microscopy (AFM). Concentration of 2D islands nucleated on the terraces and depletion zone width near the steps have been measured as functions of deposition rate and substrate temperature. We have shown that Ge[sbnd]Si and Si nanoclusters are dominating diffusion species providing surface mass transport on the Si(1 1 1)-(7 × 7) surface during Ge and Si epitaxial growth at temperatures above 500 °C and 600 °C, respectively; the activation energy of Ge[sbnd]Si nanocluster diffusion has been first estimated at 1.3–1.4 eV. The kinetics of 2D island nucleation and growth near the steps (both for Si and Ge epitaxy) and on the wide terraces (for Ge epitaxy) is limited by surface diffusion only, and critical nucleus consists of i ≫ 1 nanoclusters.
AB - We have studied two-dimensional (2D) island nucleation at the initial stages of Si and Ge epitaxial growth near monatomic steps and on wide (up to 10 μm) terraces on the Si(1 1 1)-(7 × 7) surface in 500–750 °C interval by in situ ultrahigh vacuum reflection electron microscopy (UHV REM) and ex situ atomic force microscopy (AFM). Concentration of 2D islands nucleated on the terraces and depletion zone width near the steps have been measured as functions of deposition rate and substrate temperature. We have shown that Ge[sbnd]Si and Si nanoclusters are dominating diffusion species providing surface mass transport on the Si(1 1 1)-(7 × 7) surface during Ge and Si epitaxial growth at temperatures above 500 °C and 600 °C, respectively; the activation energy of Ge[sbnd]Si nanocluster diffusion has been first estimated at 1.3–1.4 eV. The kinetics of 2D island nucleation and growth near the steps (both for Si and Ge epitaxy) and on the wide terraces (for Ge epitaxy) is limited by surface diffusion only, and critical nucleus consists of i ≫ 1 nanoclusters.
KW - A1. Nucleation
KW - A1. Surface processes
KW - A3. Molecular beam epitaxy
KW - B2. Semiconducting germanium
KW - B2. Semiconducting silicon
KW - Nucleation
KW - MAGIC ISLANDS
KW - SILICON
KW - TRANSITION
KW - CLUSTERS
KW - GROWTH
KW - Molecular beam epitaxy
KW - ATOMS
KW - Semiconducting silicon
KW - SCANNING-TUNNELING-MICROSCOPY
KW - Surface processes
KW - Semiconducting germanium
KW - TRANSFORMATIONS
KW - INITIAL-STAGES
KW - STEPS
UR - http://www.scopus.com/inward/record.url?scp=85074882438&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2019.125347
DO - 10.1016/j.jcrysgro.2019.125347
M3 - Article
AN - SCOPUS:85074882438
VL - 531
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
M1 - 125347
ER -
ID: 23057007