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Способ выращивания монокристаллов Ga2O3 из раствора в расплаве
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Applied Physics Division
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Евгений Николаевич Галашов
(Author)
Арсений Евгеньевич Галашов
(Author)
Виталий Анатольевич Московских
(Author)
Original language
Russian
Patent number
33
Priority date
03.12.2019
Publication status
Published -
17 Dec 2019
State classification of scientific and technological information
31.15.17 Crystal Chemistry and crystallography
ID: 25775664