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  1. Groups of Ge nanoislands grown outside pits on pit-patterned Si substrates

    Rudin, S. A., Zinovyev, V. A., Smagina, Z. V., Novikov, P. L., Nenashev, A. V. & Pavsky, K. V., 1 Sept 2022, In: Journal of Crystal Growth. 593, 126763.

    Research output: Contribution to journal › Article › peer-review

  2. Generating Function Method for Calculating the Potentials of Inhomogeneous Polyhedra

    Nenashev, A. V., 20 Jan 2022, In: Frontiers in Physics. 9, 795693.

    Research output: Contribution to journal › Article › peer-review

  3. Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors

    Nenashev, A. V., Oelerich, J. O., Dvurechenskii, A. V., Gebhard, F. & Baranovskii, S. D., 21 Jul 2017, In: Physical Review B. 96, 3, 7 p., 035204.

    Research output: Contribution to journal › Article › peer-review

  4. Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

    Abramkin, D. S., Petrushkov, M. O., Emelyanov, E. A., Nenashev, A. V., Yesin, M. Y., Vasev, A. V., Putyato, M. A., Bogomolov, D. B., Gutakovskiy, A. K. & Preobrazhenskiy, V. V., Feb 2021, In: Semiconductors. 55, 2, p. 194-201 8 p.

    Research output: Contribution to journal › Article › peer-review

  5. Field-enhanced mobility in the multiple-trapping regime

    Nenashev, A. V., Oelerich, J. O., Jandieri, K., Valkovskii, V. V., Semeniuk, O., Dvurechenskii, A. V., Gebhard, F., Juška, G., Reznik, A. & Baranovskii, S. D., 3 Jul 2018, In: Physical Review B. 98, 3, 8 p., 035201.

    Research output: Contribution to journal › Article › peer-review

  6. Field dependence of hopping mobility: Lattice models against spatial disorder

    Oelerich, J. O., Nenashev, A. V., Dvurechenskii, A. V., Gebhard, F. & Baranovskii, S. D., 21 Nov 2017, In: Physical Review B. 96, 19, 9 p., 195208.

    Research output: Contribution to journal › Article › peer-review

  7. ESR Study of Electron States in Ge/Si Heterostructures with Nanodisc Shaped Quantum Dots

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Kulik, L. V. & Dvurechenskii, A. V., 1 Feb 2017, In: Zeitschrift fur Physikalische Chemie. 231, 2, p. 405-423 19 p.

    Research output: Contribution to journal › Article › peer-review

  8. Electron Spin Resonance in Heterostructures with Ring Molecules of GeSi Quantum Dots

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Shklyaev, A. A., Kulik, L. V. & Dvurechenskii, A. V., Jan 2021, In: JETP Letters. 113, 1, p. 52-56 5 p.

    Research output: Contribution to journal › Article › peer-review

  9. Electron spatial localization tuned by strain in Ge/Si quantum dot heterostructures

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Kulik, L. V. & Dvurechenskii, A. V., 22 Mar 2019, In: Physical Review B. 99, 11, 9 p., 115314.

    Research output: Contribution to journal › Article › peer-review

  10. Elastic strain field due to an inclusion of a polyhedral shape with a non-uniform lattice misfit

    Nenashev, A. V. & Dvurechenskii, A. V., 28 Mar 2017, In: Journal of Applied Physics. 121, 12, 19 p., 125102.

    Research output: Contribution to journal › Article › peer-review

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