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  1. 2017

  2. Local monitoring of atomic steps on GaAs(001) surface under oxidation, wet removal of oxides and thermal smoothing

    Akhundov, I. O., Kazantsev, D. M., Alperovich, V. L., Sheglov, D. V., Kozhukhov, A. S. & Latyshev, A. V., 1 Jun 2017, In: Applied Surface Science. 406, p. 307-311 5 p.

    Research output: Contribution to journal › Article › peer-review

  3. Electron emission from Cs/GaAs and GaAs(Cs, О) with positive and negative electron affinity

    Zhuravlev, A. G., Khoroshilov, V. S. & Alperovich, V. L., 1 May 2017, In: JETP Letters. 105, 10, p. 686-690 5 p.

    Research output: Contribution to journal › Article › peer-review

  4. Thermodynamic and kinetic roughening: Monte Carlo simulation and experiment on GaAs

    Kazantsev, D. M., Akhundov, I. O., Kozhukhov, A. S. & Alperovich, V. L., 11 Apr 2017, In: Journal of Physics: Conference Series. 816, 1, 5 p., 012008.

    Research output: Contribution to journal › Conference article › peer-review

  5. Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers

    Zhuravlev, A. G. & Alperovich, V. L., 15 Feb 2017, In: Applied Surface Science. 395, p. 3-8 6 p.

    Research output: Contribution to journal › Article › peer-review

  6. Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions

    Alperovich, V. L., Akhundov, I. O., Kazantsev, D. M., Rudaya, N. S., Rodyakina, E. E., Kozhukhov, A. S., Sheglov, D. V., Karpov, A. N., Shwartz, N. L., Terekhov, A. S. & Latyshev, A. V., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 255-277 23 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

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