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  1. 2023

  2. Kinetically driven thermal roughening of semiconductor surfaces: experiment on GaAs and Monte Carlo simulation

    Kazantsev, D. M., Akhundov, I. O., Kozhuhov, A. S., Khoroshilov, V. S., Shwartz, N. L., Alperovich, V. L. & Latyshev, A. V., 1 Mar 2023, In: Physica Scripta. 98, 3, 035702.

    Research output: Contribution to journal › Article › peer-review

  3. 2022

  4. Spectral Maximum in the Terahertz Photoconductance of a Quantum Point Contact

    Kazantsev, D. M., Alperovich, V. L., Tkachenko, V. A. & Kvon, Z. D., Jul 2022, In: JETP Letters. 116, 2, p. 117-122 6 p.

    Research output: Contribution to journal › Article › peer-review

  5. Asymmetry of anticrossing between atomic steps on metal and semiconductor surfaces

    Khoroshilov, V. S., Kazantsev, D. M., Alperovich, V. L., Coupeau, C. & Drouet, M., 28 Mar 2022, In: Journal of Physics: Conference Series. 2227, 1, 012008.

    Research output: Contribution to journal › Conference article › peer-review

  6. Erratum to: Several Articles in JETP Letters (JETP Letters, (2022), 116, 2, (83-89), 10.1134/S0021364022601208)

    Semenin, N. V., Borisenko, A. S., Zalivako, I. V., Semerikov, I. A., Aksenov, M. D., Khabarova, K. Y., Kolachevsky, N. N., Glazyrin, S. I., Lykov, V. A., Karpov, S. A., Karlykhanov, N. G., Gryaznykh, D. A., Bychenkov, V. Y., Karelina, L. N., Shuravin, N. S., Ionin, A. S., Bakurskiy, S. V., Egorov, S. V., Golovchanskiy, I. A., Chichkov, V. I., & 6 othersBol’ginov, V. V., Ryazanov, V. V., Kazantsev, D. M., Alperovich, V. L., Tkachenko, V. A. & Kvon, Z. D., 2022, In: JETP Letters. 116, 12, p. 912-913 2 p.

    Research output: Contribution to journal › Article › peer-review

  7. Transition from Sublimation to Growth in Thermal Smoothing and Roughening of GaAs Surfaces

    Kazantsev, D. M., Khoroshilov, V. S., Kozhuhov, A. S. & Alperovich, V. L., 2022, Proceedings of the 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials, EDM 2022. IEEE Computer Society, p. 25-28 4 p. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; vol. 2022-June).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  8. Кафедра физики полупроводников физического факультета Новосибирского государственного университета

    Альперович, В. Л., Квон, З. Д. & Латышев, А. В., 2022, In: Сибирский физический журнал. 17, 1, p. 104-117 14 p., 9.

    Research output: Contribution to journal › Article › peer-review

  9. 2021

  10. Photoemission and photon-enhanced thermionic emission: Effect of jump in electron mass

    Alperovich, V. L., Kazantsev, D. M., Zhuravlev, A. G. & Shvartsman, L. D., 30 Sept 2021, In: Applied Surface Science. 561, 149987.

    Research output: Contribution to journal › Article › peer-review

  11. Langmuir evaporation of GaAs(1 1 1)A and GaAs(1 1 1)B: Monte Carlo simulation

    Spirina, A. A., Alperovich, V. L. & Shwartz, N. L., 28 Feb 2021, In: Applied Surface Science. 540, 6 p., 148281.

    Research output: Contribution to journal › Article › peer-review

  12. 2020

  13. Photoemission from p-GaAs(Cs,O) under transition from negative to positive electron affinity

    Protopopov, D. E., Khoroshilov, V. S., Zhuravlev, A. G., Kazantsev, D. M. & Alperovich, V. L., 28 Dec 2020, In: Journal of Physics: Conference Series. 1695, 1, 012105.

    Research output: Contribution to journal › Conference article › peer-review

  14. Thermal roughening of GaAs surface by unwinding dislocation-induced spiral atomic steps during sublimation

    Kazantsev, D. M., Akhundov, I. O., Rudaya, N. S., Kozhukhov, A. S., Alperovich, V. L. & Latyshev, A. V., 1 Nov 2020, In: Applied Surface Science. 529, 6 p., 147090.

    Research output: Contribution to journal › Article › peer-review

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