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  1. Asymmetry of anticrossing between atomic steps on metal and semiconductor surfaces

    Khoroshilov, V. S., Kazantsev, D. M., Alperovich, V. L., Coupeau, C. & Drouet, M., 28 Mar 2022, In: Journal of Physics: Conference Series. 2227, 1, 012008.

    Research output: Contribution to journal › Conference article › peer-review

  2. Electron emission from Cs/GaAs and GaAs(Cs, О) with positive and negative electron affinity

    Zhuravlev, A. G., Khoroshilov, V. S. & Alperovich, V. L., 1 May 2017, In: JETP Letters. 105, 10, p. 686-690 5 p.

    Research output: Contribution to journal › Article › peer-review

  3. Electron emission from GaAs(Cs,O): Transition from negative to positive effective affinity

    Zhuravlev, A. G., Khoroshilov, V. S. & Alperovich, V. L., 31 Jul 2019, In: Applied Surface Science. 483, p. 895-900 6 p.

    Research output: Contribution to journal › Article › peer-review

  4. ERRATUM TO: SEVERAL ARTICLES IN JETP LETTERS

    Казанцев, Д. М., Альперович, В. Л., Ткаченко, В. А. & Квон, З. Д., Dec 2022, In: JETP Letters. 116, 12, p. 912-913 2 p.

    Research output: Contribution to journal › Comment/debate › peer-review

  5. Erratum to: Several Articles in JETP Letters (JETP Letters, (2022), 116, 2, (83-89), 10.1134/S0021364022601208)

    Semenin, N. V., Borisenko, A. S., Zalivako, I. V., Semerikov, I. A., Aksenov, M. D., Khabarova, K. Y., Kolachevsky, N. N., Glazyrin, S. I., Lykov, V. A., Karpov, S. A., Karlykhanov, N. G., Gryaznykh, D. A., Bychenkov, V. Y., Karelina, L. N., Shuravin, N. S., Ionin, A. S., Bakurskiy, S. V., Egorov, S. V., Golovchanskiy, I. A., Chichkov, V. I., & 6 othersBol’ginov, V. V., Ryazanov, V. V., Kazantsev, D. M., Alperovich, V. L., Tkachenko, V. A. & Kvon, Z. D., 2022, In: JETP Letters. 116, 12, p. 912-913 2 p.

    Research output: Contribution to journal › Article › peer-review

  6. Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions

    Alperovich, V. L., Akhundov, I. O., Kazantsev, D. M., Rudaya, N. S., Rodyakina, E. E., Kozhukhov, A. S., Sheglov, D. V., Karpov, A. N., Shwartz, N. L., Terekhov, A. S. & Latyshev, A. V., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 255-277 23 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  7. Kinetically driven thermal roughening of semiconductor surfaces: experiment on GaAs and Monte Carlo simulation

    Kazantsev, D. M., Akhundov, I. O., Kozhuhov, A. S., Khoroshilov, V. S., Shwartz, N. L., Alperovich, V. L. & Latyshev, A. V., 1 Mar 2023, In: Physica Scripta. 98, 3, 035702.

    Research output: Contribution to journal › Article › peer-review

  8. Kinetics of anticrossing between slip traces and vicinal steps on crystal surfaces

    Coupeau, C., Kazantsev, D. M., Drouet, M. & Alperovich, V. L., 15 Aug 2019, In: Acta Materialia. 175, p. 206-213 8 p.

    Research output: Contribution to journal › Article › peer-review

  9. Langmuir evaporation of GaAs(1 1 1)A and GaAs(1 1 1)B: Monte Carlo simulation

    Spirina, A. A., Alperovich, V. L. & Shwartz, N. L., 28 Feb 2021, In: Applied Surface Science. 540, 6 p., 148281.

    Research output: Contribution to journal › Article › peer-review

  10. Local monitoring of atomic steps on GaAs(001) surface under oxidation, wet removal of oxides and thermal smoothing

    Akhundov, I. O., Kazantsev, D. M., Alperovich, V. L., Sheglov, D. V., Kozhukhov, A. S. & Latyshev, A. V., 1 Jun 2017, In: Applied Surface Science. 406, p. 307-311 5 p.

    Research output: Contribution to journal › Article › peer-review

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