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  1. 2024

  2. High-temperature indium adsorption on Bi2Se3(0001) surface studied by in situ reflection electron microscopy

    Ponomarev, S. A., Rogilo, D. I., Nasimov, D. A., Kokh, K. A., Sheglov, D. V. & Latyshev, A. V., 15 Feb 2024, In: Journal of Crystal Growth. 628, 127545.

    Research output: Contribution to journal › Article › peer-review

  3. Sn-mediated transformations on Si(111) surface: reconstructions, electromigration, homoepitaxy

    Petrov, A. S., Rogilo, D. I., Vergules, A. I., Mansurov, V. G., Sheglov, D. V. & Latyshev, A. V., Mar 2024, In: Surface Science. 741, 13 p., 122418.

    Research output: Contribution to journal › Article › peer-review

  4. Low-defect-density SnSe2 films nucleated via thin layer crystallization

    Ponomarev, S. A., Zakhozhev, K. E., Rogilo, D. I., Gutakovsky, A. K., Kurus, N. N., Kokh, K. A., Sheglov, D. V., Milekhin, A. G. & Latyshev, A. V., 1 Apr 2024, In: Journal of Crystal Growth. 631, 5 p., 127615.

    Research output: Contribution to journal › Article › peer-review

  5. Capture zone scaling in 2D Ge island nucleation on Si(111)-(7 × 7) at elevated temperatures

    Makeeva, A. A., Petrov, A. S., Rogilo, D. I., Sheglov, D. V. & Latyshev, A. V., 1 Dec 2024, In: Journal of Crystal Growth. 647, 127873.

    Research output: Contribution to journal › Article › peer-review

  6. 2025

  7. Structural Transformation of Bi2Se3(001) Surface during Sn Monolayer Annealing

    Zakhozhev, K., Ponomarev, S., Golyashov, V., Nasimov, D., Kokh, K. & Rogilo, D., 8 Aug 2025, International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM. IEEE Computer Society, p. 80-83 4 p. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

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