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  1. 2017

  2. Atomic Processes on the Silicon Surface

    Latyshev, A. V., Fedina, L. I., Kosolobov, S. S., Sitnikov, S. V., Rogilo, D. I., Rodyakina, E. E., Nasimov, D. A., Sheglov, D. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Inc., p. 189-221 33 p.

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  3. Atomic Structure of Semiconductor Low-Dimensional Heterosystems

    Gutakovskii, A. K., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Inc., p. 223-253 31 p.

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  4. Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures

    Tkachenko, O. A., Tkachenko, V. A., Kvon, Z. D., Sheglov, D. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Inc., p. 131-155 25 p.

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  5. Preface

    Latyshev, A. V., Dvurechenskii, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Inc., p. xxiii-xxiv

    Research output: Chapter in Book/Report/Conference proceeding › Foreword/postscript › Research › peer-review

  6. Preface

    Latyshev, A. V., Dvurechenskii, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Inc., p. xxiii-xxiv

    Research output: Chapter in Book/Report/Conference proceeding › Foreword/postscript › Research › peer-review

  7. Universality of the (113) Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation

    Fedina, L. I., Gutakovskii, A. K., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Inc., p. 383-407 25 p.

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  8. Element base of quantum informatics II: Quantum communications with single photons

    Ryabtsev, I. I., Tretyakov, D. B., Kolyako, A. V., Pleshkov, A. S., Entin, V. M., Neizvestny, I. G., Latyshev, A. V. & Aseev, A. L., 1 Mar 2017, In: Russian Microelectronics. 46, 2, p. 121-130 10 p.

    Research output: Contribution to journal › Article › peer-review

  9. Element base of quantum informatics I. Qubits of a quantum computer based on single atoms in optical traps

    Ryabtsev, I. I., Beterov, I. I., Yakshina, E. A., Tretyakov, D. B., Entin, V. M., Neizvestny, I. G., Latyshev, A. V. & Aseev, A. L., 1 Mar 2017, In: Russian Microelectronics. 46, 2, p. 109-120 12 p.

    Research output: Contribution to journal › Article › peer-review

  10. 2019

  11. Памяти Жореса Ивановича Алфёрова

    Асеев, А. Л., Варшалович, Д. А., Велихов, Е. П., Грехов, И. В., Гуляев, Ю. В., Жуков, А. Е., Иванов, С. В., Каплянский, А. А., Копьев, П. С., Красников, Г. Я., Сурис, Р. А. & Фортов, В. Е., Aug 2019, In: Physics-Uspekhi. 62, 8, p. 839-840 2 p.

    Research output: Contribution to journal › Article › peer-review

  12. MBE-grown MCT hetero- A nd nanostructures for IR and THz detectors

    Dvoretsky, S. A., Mikhailov, N. N., Remesnik, V. G., Sidorov, Y. G., Shvets, V. A., Ikusov, D. G., Varavin, V. S., Yakushev, M. V., Gumenjuk-Sichevska, J. V., Golenkov, A. G., Lysiuk, I. O., Tsybrii, Z. F., Shevchik-Shekera, A. V., Sizov, F. F., Latyshev, A. V. & Aseev, A. L., 1 Sept 2019, In: Opto-electronics Review. 27, 3, p. 282-290 9 p.

    Research output: Contribution to journal › Article › peer-review

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