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  1. 2021

  2. Shapes of Ge and Si Particles Created on a Si/SiO2Substrate by Lift-off Technique

    Utkin, D. & Shklyaev, A., 30 Jun 2021, 2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings. IEEE Computer Society, p. 33-36 4 p. 9507661. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; vol. 2021-June).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  3. Broadband Antireflection Coatings Made of Resonant Submicron- And Micron-Sized SiGe Particles Grown on Si Substrates

    Shklyaev, A. A. & Tsarev, A. V., Jun 2021, In: IEEE Photonics Journal. 13, 3, 9435026.

    Research output: Contribution to journal › Article › peer-review

  4. Electrostatic actuation and charge sensing in piezoelectric nanomechanical resonators with a two-dimensional electron gas

    Shevyrin, A. A., Pogosov, A. G., Bakarov, A. K. & Shklyaev, A. A., 3 May 2021, In: Applied Physics Letters. 118, 18, 183105.

    Research output: Contribution to journal › Article › peer-review

  5. Crossing and anticrossing of 1D subbands in a quantum point contact with in-plane side gates

    Pokhabov, D. A., Pogosov, A. G., Zhdanov, E. Y., Bakarov, A. K. & Shklyaev, A. A., 4 Jan 2021, In: Applied Physics Letters. 118, 1, 5 p., 012104.

    Research output: Contribution to journal › Article › peer-review

  6. Electron Spin Resonance in Heterostructures with Ring Molecules of GeSi Quantum Dots

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Shklyaev, A. A., Kulik, L. V. & Dvurechenskii, A. V., Jan 2021, In: JETP Letters. 113, 1, p. 52-56 5 p.

    Research output: Contribution to journal › Article › peer-review

  7. Особенности формирования субмикронных частиц Ge и Si методом обратной литографии

    Utkin, D. & Шкляев, А. А., 2021, Нанофизика и наноэлектроника: Материалы XXV Международного симпозиума. Нижний Новгород: Издательство Нижегородского госуниверситета, Vol. 2. p. 885-886 2 p.

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  8. 2020

  9. Double-Channel Electron Transport in Suspended Quantum Point Contacts with in-Plane Side Gates

    Pokhabov, D. A., Pogosov, A. G., Zhdanov, E. Y., Bakarov, A. K. & Shklyaev, A. A., Dec 2020, In: Semiconductors. 54, 12, p. 1605-1610 6 p.

    Research output: Contribution to journal › Article › peer-review

  10. Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si/In2O3:Er films

    Feklistov, K. V., Lemzyakov, A. G., Prosvirin, I. P., Gismatulin, A. A., Shklyaev, A. A., Zhivodkov, Y. A., Krivyakin, G., Komonov, A. I., Kozhukhov, A. S., Spesivsev, E. V., Gulyaev, D. V., Abramkin, D. S., Pugachev, A. M., Esaev, D. G. & Sidorov, G. Y., Dec 2020, In: Materials Research Express. 7, 12, 11 p., 125903.

    Research output: Contribution to journal › Article › peer-review

  11. The modification of optical properties of the surfaces by the glancing angle deposition of TiO2

    Lemzyakov, A., Konstantin, K., Porosev, V., Azarov, I. & Shklyaev, A., 17 Nov 2020, Synchrotron and Free Electron Laser Radiation: Generation and Application, SFR 2020. Knyazev, B. & Vinokurov, N. (eds.). American Institute of Physics Inc., 060008. (AIP Conference Proceedings; vol. 2299).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  12. Dependence of light reflection of germanium Mie nanoresonators on their aspect ratio

    Utkin, D. E., Anikin, K. V., Veber, S. L. & Shklyaev, A. A., Nov 2020, In: Optical Materials. 109, 5 p., 110466.

    Research output: Contribution to journal › Article › peer-review

  13. Formation of submicron- and micron-sized SiGe and Ge particles on Si substrates using dewetting

    Shklyaev, A. A., 23 Apr 2020, In: Journal of Physics: Conference Series. 1461, 1, 3 p., 012160.

    Research output: Contribution to journal › Conference article › peer-review

  14. Atomic structure of high Miller index Si(47 35 7) surface

    Zhachuk, R. A., Dolbak, A. E. & Shklyaev, A. A., Mar 2020, In: Surface Science. 693, 5 p., 121549.

    Research output: Contribution to journal › Article › peer-review

  15. Low-temperature dissipation and its persistent photoinduced change in AlGaAs/GaAs-based nanomechanical resonators

    Shevyrin, A. A., Pogosov, A. G., Bakarov, A. K. & Shklyaev, A. A., 3 Feb 2020, In: Applied Physics Letters. 116, 5, 5 p., 053104.

    Research output: Contribution to journal › Article › peer-review

  16. Effect of deposition conditions on the thermal stability of Ge layers on SiO2 and their dewetting behavior

    Dabard, C., Shklyaev, A. A., Armbrister, V. A. & Aseev, A. L., 1 Jan 2020, In: Thin Solid Films. 693, 7 p., 137681.

    Research output: Contribution to journal › Article › peer-review

  17. 2019

  18. Universal building block for (1 1 0)-family silicon and germanium surfaces

    Zhachuk, R. A. & Shklyaev, A. A., 15 Nov 2019, In: Applied Surface Science. 494, p. 46-50 5 p.

    Research output: Contribution to journal › Article › peer-review

  19. Suspended quantum point contact with triple channel selectively driven by side gates

    Pokhabov, D. A., Pogosov, A. G., Zhdanov, E. Y., Bakarov, A. K. & Shklyaev, A. A., 7 Oct 2019, In: Applied Physics Letters. 115, 15, 152101.

    Research output: Contribution to journal › Article › peer-review

  20. Nanoscale characterization of photonic metasurface made of lens-like SiGe Mie-resonators formed on Si (100) substrate

    Poborchii, V., Shklyaev, A., Bolotov, L. & Uchida, N., 28 Sept 2019, In: Journal of Applied Physics. 126, 12, 11 p., 123102.

    Research output: Contribution to journal › Article › peer-review

  21. On-chip Piezoelectric Actuation of Nanomechanical Resonators Containing a Two-dimensional Electron Gas

    Shevyrin, A. A., Bakarov, A. K., Shklyaev, A. A., Arakcheev, A. S., Kurosu, M., Yamaguchi, H. & Pogosov, A. G., 1 Feb 2019, In: JETP Letters. 109, 4, p. 261-265 5 p.

    Research output: Contribution to journal › Article › peer-review

  22. Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures

    Shklyaev, A. A. & Latyshev, A. V., 28 Jan 2019, In: Applied Surface Science. 465, p. 10-14 5 p.

    Research output: Contribution to journal › Article › peer-review

  23. 2018

  24. Kelvin force and Raman microscopies of flat SiGe structures with different compositions grown on Si(111) at high temperatures

    Shklyaev, A. A., Bolotov, L., Poborchii, V., Tada, T. & Romanyuk, K. N., 15 Aug 2018, In: Materials Science in Semiconductor Processing. 83, p. 107-114 8 p.

    Research output: Contribution to journal › Article › peer-review

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